Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.

The Y2O3 films grown with a new and heteroleptic liquid Y precursor, (iPrCp)2Y(iPr-amd), have been investigated with chemical properties of precursor, atomic layer deposition process, and material characterization of the deposited film and its non-volatile resistive switching behaviour.

The resistance switching behaviors of SiO 2 , HfO 2 , and TiO 2 are investigated to elucidate their universal physical origins. It is demonstrated that a multideposition film fabrication process consisting of repeated thin film deposition and low-temperature annealing in O 2 ambient leads to superior resistance switching behaviors, such as forming-free switching characteristics, low switching voltage, and high resistance ratio of low-and high-resistance states compared with the conventional sputtered TiO 2 film. From the resistance switching characteristics of binary metal oxide films, it is also observed that the device operation parameters, including reset/set voltages and resistance ratio, are related to the dielectric constants of the oxides.

The incorporation of an ultrathin, atomic layer deposited HfO2 layer in between the spin-coated poly-4-vinyl phenol (PVP) organic layers in the laminated multilayer gate dielectric for pentacene organic thin film transistors on a flexible substrate reduced the gate leakage current by three to four orders of magnitude and thereby significantly enhanced the current on/off ratio up to ≅104-fold. Cyclic bending testing indicated that the electrical characteristics of the device with the PVP∕HfO2∕PVP trilayer gate dielectric stack were superior to those of the device with the single PVP gate dielectrics due to the improved mechanical and electrical stabilities of the gate dielectric.