No abstract

No abstract

No abstract

This paper reviews the experimental and theoretical studies of quantum well solar cells with an aim of providing the background to the more detailed papers on this subject in these in these proceedings. It discusses the way quantum wells enhance efficiency in real, lattice matched material systems and fundamental studies of radiative recombination relevant to the question of whether such enhancements are possible in ideal cells. A number of theoretical models for QWSCs are briefly reviewed and more detail is given of our own group's model of the dark-currents. The temperature and field dependence of QWSCs are all briefly reviewed.

Abstract:We propose and experimentally demonstrate that, contrary to what was thought up to now, an efficient BB84 operation is feasible using the double phase modulator (PM-PM) configuration in frequency-coded quantum key distribution systems without dispersion compensation. This is achieved by exploiting the chromatic dispersion provided by the fiber linking Alice and Bob. Thus, we refer to this system as dispersion supported or as the DS BB84 PM-PM configuration.

The photocurrent available from a p-i-n solar cell can be increased by the addition of quantum wells ͑QWs͒ to the undoped region. At the same time the QWs reduce the open-circuit voltage by introducing areas of lower band gap where recombination is enhanced. This increase in recombination should be as small as possible for the most favorable effect on the photovoltaic efficiency of the device. Theoretical considerations indicate that nonradiative recombination, which is the dominant loss mechanism in Al x Ga 1Ϫx As/GaAs QW structures, may be reduced by positioning the QWs away from the point where the electron-hole product is a maximum. For p-i-n diodes, where recombination is greatest at or near the center of the space charge region, this means locating the QWs closer to the doped regions. Spectral response should not be affected so long as the QWs are still located within the field bearing region. Thus, improved photovoltaic performance may be expected through strategic location of the QWs. We report on measurements on a series of Al 0.36 Ga 0.64 As p-i-n photodiodes, three of which contained a single 87 Å GaAs QW within the i region, and one which was a control sample with no QW. The three QW samples were grown with the QW located nearer to the p-doped layer, centrally, and nearer to the n-doped layer, respectively. Spectral response measurements confirm that for good quality samples photocurrent is independent of QW location within the depleted region. Contrary to expectations, the dark current is highest for the sample with the QW located closer to the n region. We analyze these results in terms of structure and doping profile, and compare them with the predictions of a self-consistent model. The observed behavior is attributed to a relatively high unintentional background doping in the intrinsic region.

No abstract

Photon recycling in strain balanced quantum well solar cells grown on distributed Bragg reflectors has been observed as a suppression of the dark current and a change in electroluminescence spectra. Comparing devices grown with and without distributed Bragg reflectors we have demonstrated up to a 33% reduction in the ideality n = 1 reverse saturation current. Furthermore, to validate the observations we demonstrate how both the measured dark currents and electroluminescence spectra fit very well to a photon recycling model. Verifying our observations with the model then allows us to calculate optimised device designs.