Progress in quantum well solar cells

Mazzer, M.; Barnham, K.W.J.; Ballard, Ian; Bessière, Aurélie; Ioannides, Andreas; Johnson, D. C.; Lynch, M.; Tibbits, T.N.D.; Roberts, J.S.; Hill, G.; Calder, C.

doi:10.1016/j.tsf.2005.12.120

Cited by 73 publications

(30 citation statements)

References 8 publications

(12 reference statements)

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“…[71] Intermediate-band and quantum-well solar cells can convert photons with sub-bandgap energy into electric energy. [72][73][74] More precisely, sub-bandgap photons can excite electrons into a sub-band or quantum-well state where they are metastable. The electron can absorb a second photon that excites it into the CB to generate a photovoltage which is higher than the corresponding potentials " hw/q of the photons absorbed by the cell (" h is the Planck constant divided by 2 p, w is photon angular frequency and q the elementary charge).…”

Section: Quantum Dots For Third-generation Photovoltaicsmentioning

confidence: 99%

Quantum‐Dot‐Sensitized Solar Cells

Rühle¹,

Shalom²,

Zaban³

2010

ChemPhysChem

847

511

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Quantum‐dot‐sensitized solar cells (QDSCs) are a promising low‐cost alternative to existing photovoltaic technologies such as crystalline silicon and thin inorganic films. The absorption spectrum of quantum dots (QDs) can be tailored by controlling their size, and QDs can be produced by low‐cost methods. Nanostructures such as mesoporous films, nanorods, nanowires, nanotubes and nanosheets with high microscopic surface area, redox electrolytes and solid‐state hole conductors are borrowed from standard dye‐sensitized solar cells (DSCs) to fabricate electron conductor/QD monolayer/hole conductor junctions with high optical absorbance. Herein we focus on recent developments in the field of mono‐ and polydisperse QDSCs. Stability issues are adressed, coating methods are presented, performance is reviewed and special emphasis is given to the importance of energy‐level alignment to increase the light to electric power conversion efficiency.

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Section: Quantum Dots For Third-generation Photovoltaicsmentioning

confidence: 99%

Quantum‐Dot‐Sensitized Solar Cells

Rühle¹,

Shalom²,

Zaban³

2010

ChemPhysChem

847

511

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“…The concept was originally proposed 1990 [60] and since then experimental efficiency gains have been achieved [61]. The idea is similar to that of QDs where the QWs can absorb lower energy photons creating electron-hole pairs (EHPs) contributing to the photocurrent.…”

Section: Intermediate-band Cellsmentioning

confidence: 99%

“…Further improvements were made by introducing Bragg reflectors (alternating layers of high and low indexes of refraction) at the back of the solar cell to increase the probability of absorbing below gap photons [65]. These improvements have resulted in efficiencies above 26% under 200× concentration [61].…”

Section: Intermediate-band Cellsmentioning

confidence: 99%

“…The probability of such an absorption event is considered very unlikely and therefore this would practically limit these cells to below the Shockley-Queisser limit. However, Mazzer and others have shown electrons can leave the QW without photon absorption and credit this to hot carrier transport [61]. Anderson provides a good review of the controversy [67].…”

Section: Intermediate-band Cellsmentioning

confidence: 99%

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Third generation photovoltaics

Brown

2009

Laser & Photonics Reviews

176

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We review recent progress towards increasing solar cell efficiencies beyond the Shockley-Queisser efficiency limit. Four main approaches are highlighted: multi-junction cells, intermediate-band cells, hot carrier cells and spectrum conversion. Multi-junction cells use multiple solar cells that selectively absorb different regions of the solar spectrum. Intermediateband cells use one junction with multiple bandgaps to increase efficiencies. Hot-carrier cells convert the excess energy of abovebandgap photons into electrical energy. Spectrum conversion solar cells convert the incoming polychromatic sunlight into a narrower distribution of photons suited to the bandgap of the solar cell.The AM 1.5 solar spectrum along with the bandgaps of some semiconductors. Third generation photovoltaics strive to maximize the efficiency of converting polychromatic radiation into electricity.

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“…In order to achieve high efficiency solar cells, one strategy is the utilization of a multi-junction structure [1][2][3]. Unfortunately, one important factor limiting the efficiency of III-V/Ge multi-junction solar cells is the current mismatch among cells, especially the low current density in the GaAs middle junction [4]. The method to achieve better current balancing and higher performance is the extension of the absorption edge of the GaAs middle cell by implementing a lower band gap InGaAs cell.…”

Section: Introductionmentioning

confidence: 99%