Quantum well solar cells

Barnham, K.W.J.; Ballard, Ian; Connolly, J.P.; Ekins-Daukes, N. J.; Kluftinger, Benjamin; Nelson, Jenny; Rohr, Carsten

doi:10.1016/s1386-9477(02)00356-9

Cited by 139 publications

(45 citation statements)

References 25 publications

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“…Advanced methods to bypass the Shockley-Queisser limit include intermediate-band [62,63] and quantum-well solar cells, [64][65][66][67] QD-based cells for multi-carrier generation by impact ionization [68,69] and multiple-junction tandem cells. [70] Furthermore, optical methods such as photon up-and downconversion can be utilized.…”

Section: Quantum Dots For Third-generation Photovoltaicsmentioning

confidence: 99%

Quantum‐Dot‐Sensitized Solar Cells

Rühle¹,

Shalom²,

Zaban³

2010

ChemPhysChem

837

511

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Quantum‐dot‐sensitized solar cells (QDSCs) are a promising low‐cost alternative to existing photovoltaic technologies such as crystalline silicon and thin inorganic films. The absorption spectrum of quantum dots (QDs) can be tailored by controlling their size, and QDs can be produced by low‐cost methods. Nanostructures such as mesoporous films, nanorods, nanowires, nanotubes and nanosheets with high microscopic surface area, redox electrolytes and solid‐state hole conductors are borrowed from standard dye‐sensitized solar cells (DSCs) to fabricate electron conductor/QD monolayer/hole conductor junctions with high optical absorbance. Herein we focus on recent developments in the field of mono‐ and polydisperse QDSCs. Stability issues are adressed, coating methods are presented, performance is reviewed and special emphasis is given to the importance of energy‐level alignment to increase the light to electric power conversion efficiency.

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Section: Quantum Dots For Third-generation Photovoltaicsmentioning

confidence: 99%

Quantum‐Dot‐Sensitized Solar Cells

Rühle¹,

Shalom²,

Zaban³

2010

ChemPhysChem

837

511

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“…Araujo and Marti, using thermodynamic arguments, established that the ideal MQWSC cannot exceed the efficiency of ideal ordinary solar [2]. However, Barnham et al [3] reported experimental results showing enhancement in the MQWSC efficiency and they argued that their observations support that the assumption made by Araujo and Marti (spatially constant quasi Fermi level), is not applicable to the solar cells under no radiative recombination dominance. In order to contribute to clear up this controversy we extended a theoretical ideal model reported in reference [4] which shows that the insertion of multiquantum wells into the depletion region of a p-i (MQW)-n Al x Ga 1-x As/GaAs solar cell can enhance the conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

Quantum and conversion efficiency calculation of AlGaAs/GaAs multiple quantum well solar cells

Rimada

Hernández

Connolly

et al. 2005

Physica Status Solidi (b)

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The quantum well solar cell (QWSC) is a novel device that has been proposed by Barnham and coworkers at Imperial College London. In this work, the quantum efficiency for AlGaAs/GaAs QWSC has been calculated and compared with available data from the group at Imperial College London. Quantum efficiency calculations will be presented and compared with experimental data for several AlGaAs/GaAs QWSC, obtaining good agreement. The photocurrent then is calculated from the quantum efficiency calculations and included in the J(V) relation to optimize the efficiency of AlGaAs/GaAs QWSC. It also shows that for a range of quantum well widths and barrier bandgaps the conversion efficiencies of the quantum well solar cell are higher than the corresponding homogeneous p -i -n solar cell. Our results give a broad representation of quantum well solar cell operation, and provide a profitable guide for designing and interpreting the performance characteristics of AlGaAs/GaAs QWSCs.

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“…Visual azimuthal asymmetry of the ω RCs for [1][2][3][4][5][6][7][8][9][10] direction corresponds to the anisotropic spatial distribution of extended defects. This distribution results in secondary DL density estimates differing by about an order of magnitude, namely of $1.3 Â 10 7 cm À 2 and 1.7 Â 10 8 cm À 2 for [110] and [1][2][3][4][5][6][7][8][9][10] azimuths, respectively. The anisotropic spatial distribution of secondary DLs is also confirmed by the different degree of relaxation of the strained layers.…”

Section: Effect Of Mqw Periodmentioning

confidence: 99%

“…Physical properties and hence final device performance depend critically on the crystal quality of the epitaxial structure [1][2][3][4][5]. In multiple-quantum-well (MQW) solar cells, which appear to offer a superior approach compared to their homojunction counterparts [6][7][8], crystal quality deterioration still inhibits tapping of their full potential [9].…”

Section: Introductionmentioning

confidence: 99%

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Karow

Faleev

Smith

et al. 2015

Journal of Crystal Growth

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a b s t r a c tWe present a systematic study of extended defect creation in InGaAs/GaAs multiple quantum well (MQW) structures. Three sets of samples, grown by molecular beam epitaxy, were characterized by highresolution x-ray diffraction and transmission electron microscopy. First, in a temperature series, optimal deposition temperature of 505 1C was found for the In composition of 20% as determined from dislocation loop (DL) density and inspection of diffuse scattering patterns. InGaAs decomposition and lateral layer thickness undulations were observed above this optimal temperature. Second, increase of MQW periodicity from Â 5 to Â 10 revealed a thickness-related cumulative deterioration, characterized by increased likelihood of defect intersection with continued MQW growth, as suggested by an increase of the secondary DL density from $ 1.6 Â 10 7 cm À 2 to $ 6 Â 10 8 cm À 2 . Additional strained layers experienced an ever-degrading quality of the growth surface. Third, a set consisting of samples with three different MQW periods was investigated. Different stages, suggested by a model of defect creation, were obtained for these different MQW periods, allowing specification of particular type, density, and spatial distribution of extended defects for each stage of defect creation.

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Quantum well solar cells

Cited by 139 publications

References 25 publications

Quantum‐Dot‐Sensitized Solar Cells

Quantum‐Dot‐Sensitized Solar Cells

Quantum and conversion efficiency calculation of AlGaAs/GaAs multiple quantum well solar cells

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

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