Persistent current in a correlated quantum ring threaded by an Aharonov-Bohm flux is studied in the presence of electron-phonon interactions and Rashba spin-orbit coupling. The quantum ring is modeled by the Holstein-Hubbard-Rashba Hamiltonian and the energy is calculated by performing the conventional Lang-Firsov transformation followed by the diagonalization of the effective Hamiltonian within a mean-field approximation. The effects of Aharonov-Bohm flux, temperature, spin-orbit and electron-phonon interactions on the persistent current are investigated. It is shown that the electron-phonon interactions reduce the persistent current, while the Rashba coupling enhances it. It is also shown that temperature smoothens the persistent current curve. The effect of chemical potential on the persistent current is also studied.

The Holstein-Hubbard model with Gaussian phonon anharmonicity is studied in one-dimension at half filling using a variational method based on a series of canonical transformations. A fairly accurate phonon state is chosen to average the transformed Holstein-Hubbard Hamiltonian to obtain an effective Hubbard model which is then solved using the exact Bethe - ansatz following Lieb and Wu to obtain the ground state energy, the average lattice displacement and the renormalized parameters. The Mott-Hubbard criterion, local spin moment and the von Neumann entropy (which is a measure of quantum entanglement) are calculated to determine the ground state phase diagram which shows that the width of the metallic phase flanked by the SDW and CDW phases increases with increasing anharmonicity at low and moderate values of anharmonicity but eventually saturates when the anharmonicity becomes substantially large.

A comprehensive review of the fabrication process, fundamental properties and functionalities and device applications of heterogeneously integrated two-dimensional (2D) materials is provided. An extensive library of atomic 2D materials with selectable material properties exists and it is rapidly expanding, with which it is possible to construct hybrid or heterostructures that display novel properties with unique functionalities. Such heterostructures adding a degree of freedom to carriers in the third direction provide interesting possibilities for the design of functional novel devices. The subject of 2D heterostructures has now become so vast that no single article can cover the entire topic in any reasonable manner. This review is intended to bridge the gap between the major developments already discovered and current trends in 2D heterostructures.

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