Extremely early phases of the catastrophic optical damage (COD) process in 808-nm emitting GaAs/Al 0 .35 Ga 0 .65 As high-power diode lasers are prepared by the application of short single current pulses. Typical energy entries during these pulses are on the order of 100 nJ within several 100 ns. The resulting defect pattern is investigated by high-resolution microscopy. The root of the COD is found to be located at the waveguide of the laser structure. Analysis of material composition modifications as a result of early COD phase points to melting being involved in the process. During recrystallization, an Al-rich pattern is formed that encloses a volume of a few cube micron of severely damaged material.

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Indentation techniques were utilised to induce deformation on polar (0001) c-plane and non-polar [Formula: see text] m-plane GaN single crystal. Cracking was more sensitively dependent on the orientation of the indenter tip, compared to hardness. The indentation-induced plastic deformation and fracture sequences were studied by cathodoluminescence imaging and optical microscopy, respectively. Polar GaN was harder than non-polar, while pop-in discontinuities occurred at lower loads in polar than non-polar GaN. Dislocation arrangements were more isotropic at the polar than the non-polar orientation. Polar GaN was more susceptible to cracking compared to non-polar. Indentation at the high load regime fostered radial and lateral crack formation at both indenter orientations in polar GaN. Post-indentation lateral crack propagation was observed in situ in polar GaN. This is part of a thematic issue on Nanoscale Materials Characterisation and Modeling by Advances Microscopy Methods - EUROMAT.