In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin lms by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained lms have been investigated by electron diraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of In2O3 lms formation with high selectivity and sensitivity to NO2, and NH3 are established.
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