Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties

Luhin, V.; Zharsky, I.M.; Zhukowski, P.

doi:10.12693/aphyspola.123.837

Cited by 10 publications

(3 citation statements)

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“…This suggests oxygen vacancies in the ALD In 2 O 3 film consistent with the weak shoulder on the O 1s peak. All the XPS data were in good agreement with the reported XPS data of pure In 2 O 3 thin films. − …”

Section: Resultssupporting

confidence: 85%

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Mane

Allen

Kanjolia³

et al. 2016

J. Phys. Chem. C

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We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using alternating exposures of trimethylindium (TMIn) and a variety of oxygen sources: ozone (O3), O2, deionized H2O, and hydrogen peroxide (H2O2). We used in situ quartz crystal microbalance measurements to evaluate the effectiveness of the different oxygen sources and found that only O3 yielded viable and sustained In2O3 growth with TMIn. These measurements also provided details about the In2O3 growth mechanism and enabled us to verify that both the TMIn and O3 surface reactions were self-limiting. In2O3 thin films were prepared and characterized using X-ray diffraction, ultraviolet–visible spectrophotometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and scanning electron microscopy. The electrical transport properties of these layers were studied by Hall probe measurements. We found that, at deposition temperatures within the range of 100–200 °C, the In2O3 growth per cycle was nearly constant at 0.46 Å/cycle and the films were dense and pure. The film thickness was highly uniform (<0.3% variation) along the 45 cm length of our tubular ALD reactor. At higher growth temperatures the In2O3 growth per cycle increased due to thermal decomposition of the TMIn. The ALD In2O3 films showed resistivities as low as 3.2 × 10–3 Ω cm, and carrier concentrations as large as 7.0 × 1019 cm–3. This TMIn/O3 process for In2O3 ALD should be suitable for eventual scale-up in photovoltaics.

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Section: Resultssupporting

confidence: 85%

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Mane

Allen

Kanjolia³

et al. 2016

J. Phys. Chem. C

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“…Naeem et al [47] attributed the high binding energy peak at 531.6 eV to O 2ions in the oxygen deficient region. Luhin et al [48] assigned the photoelectron line with a binding energy 531.9 eV to the surface adsorbed oxygen in various forms as well as to the oxygen incorporated in a hydroxyl group. Hence the higher energy peaks observed at 530.97 eV for N0 film and at 531.20 eV for N7 film can be due to O 2ions in the oxygen deficient region or to the surface adsorbed oxygen.…”

Section: Xps Analysismentioning

confidence: 99%

Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In₂O₃ nanostructured films

Krishnan

Chalana

Sagadevan

et al. 2016

Phys. Status Solidi C

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Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3films are analyzed using techniques such as X‐ray diffraction (XRD), micro‐Raman spectroscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy, UV–visible spectroscopy, spectroscopic ellipsometry, photoluminescence spectroscopy and Hall effect measurements. XRD analysis reveals that the as‐deposited undoped and Nb doped films are polycrystalline in nature with cubic bixbyite structure. Raman analysis supports the presence of cubic bixbyite structure of In2O3in the films. XPS analysis shows a decrease of oxygen deficiency due to Nb and the existence of Nb as Nb4+ in the In2O3lattice. The band gap energy of the films increases with increase in Nb concentration. PL spectra reveal intense UV and visible emissions in all the films. Optical constants of the films are determined using spectroscopic ellipsometry. The thickness of films estimated using FESEM and ellipsometry are in good agreement. The carrier concentration, mobility and nature of carriers are measured using Hall measurement technique in Van der Pauw configuration at room temperature.

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“…The O1s XPS spectra on deconvolution ( Fig. 2 (d [45] and the O II peak ~ 531.36 eV in the films is related to O 2ions in the oxygen deficient region or to the surface adsorbed oxygen [46].…”

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confidence: 99%

Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering

Krishnan

Sanjeev

Prabhu

et al. 2018

JOM

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Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties

Cited by 10 publications

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Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In₂O₃ nanostructured films

Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering

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Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties

Cited by 10 publications

References 0 publications

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films

Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering

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Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In₂O₃ nanostructured films