The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. The device is fabricated by 0.35um BCD (Bipolar-CMOS-DMOS) technology and investigated not only the electrical characteristics, but also temperature dependence of holding voltage/current in a wide temperature range from 300K to 500K. In the measurement result, the proposed device has holding voltage of 8V and second breakdown current of 80mA/um. At high temperature condition of above 400K, the holding voltage, holding current and second breakdown current of the proposed device rapidly decrease.
ESD Protection circuits with low triggering voltage, low leakage current and fast turn-on using trigger techniques are presented in this paper. The proposed ESD protection devices are designed in 0.13um CMOS Technology. The results show that the proposed substrate Triggered NMOS using bipolar transistor has a lower trigger voltage of 5.98V and a faster turn-on time of 37ns. And the results show that the proposed gate-substrate triggered NMOS have lower trigger voltage of 5.35V and lower leakage current of 80pA.
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