In this paper, we have investigated the electrical characteristics of power LDMOSFETs having different gate lengths(2.1 ㎛ -3 ㎛). in the temperature range of 100 K -500K. The specific on-resistance and the off-state breakdown voltage increase with temperature. The result shows that the specific onresistance increases exponentially with the exponent of 2.2 and, by contrast, the off-state breakdown voltage increases linearly with a slope of 100 mV/K (Drift region concentration of measured device: 2 X 10 15 cm -3 ). As a result, Ron/BV, known for a figure of merit of power device, increases with temperature.
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