Using high performance merged complementary BiCMOS circuit structure, a 2K-gate BiCMOS gate array master slice and its unit cell library have been designed and created by 2 P m rules. On this master slice, a double 64 bits high speed shift register has also been customized. A intemal gate delay of the gate array is 0.65ns(typical). The operating frequency of the custom IC is more than 1OOMHz.
A study of defects in silicon produced by hightemperature electron irradiation was carried out. It was found that the introduction rate of defect increased with the temperature at which the samples were irradiated by electron. After the temperature reached an "extreme" value Tm, the introduction rate of defect began to decrease. The Tm value was related to the annealing activation energy of defect. It was also found that the density of E3 (Ec-0.36 eV) defects greatly increased in hightemperature electron irradiation. When electron irradiation was carried out at 330℃, the density of E3 defects was about 6 times as large as that at room temperature. The possible structure of the E3 defect is multivacancy-oxygen complex.
A novel serially concatenated GMSK system is proposed for satellite communications subject to low SNR, limited power and spectrum resources. First, we design a Nonrecursive continuous‐phase encoder (NRCPE) based GMSK based on the Rimoldi's decomposition. Then, a corresponding pilot‐aided quasi‐coherent demodulation algorithm is developed, whose basic principle is that a modified BCJR‐based detection performs on the received signals with initial and ending trellisstates being determined using the very limited pilot overhead. Finally, we choose proper modulation parameters for the NRCPE based Gaussian minimum shift keying GMSK signaling according to the trade‐offs between the power and spectral efficiency. The simulation results show that the LDPC coded GMSK system using the proposed algorithm can achieve excellent performance and can also work well in the presence of the large Doppler shifts and some burst errors.
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