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A supersaturation of nitrogen atoms is found in the surface layer of microstructured silicon after femtosecond (fs) laser irradiation in NF3. The average nitrogen concentration in the uppermost 50 nm is about 0.5 ± 0.2 at. %, several orders of magnitude higher than the solid solubility of nitrogen atoms in silicon. The nitrogen-hyperdoped silicon shows high crystallinity in the doped layer, which is due to the repairing effect of nitrogen on defects in silicon lattices. Nitrogen atoms and vacancies can be combined into thermal stable complexes after fs laser irradiation, which makes the nitrogen-hyperdoped silicon exhibit good thermal stability of optical properties.

Wavelength‐tunable nano/microlasers are essential components for various highly integrated and multifunctional photonic devices. Based on the different band gap/composition of inorganic cesium lead halide perovskite materials, broad band light absorption and emission devices can be achieved. Herein, a vapor–liquid–solid route for growing cesium lead halide perovskite (CsPbX3, X = Cl, Br, I) microcrystal structures is demonstrated. These square‐shaped microstructures exhibit strong blue, green, and red photoluminescence, indicating that their band gaps can be engineered to cover the entire visible range. Optically pumped red–green–blue whispering‐gallery mode lasers based on the controlled composition of these microcrystals are successfully realized at room temperature. Moreover, rationally designed white‐light‐emitting chips with high brightness are fabricated utilizing these metal halide perovskite microstructures grown on sapphire. All these results evidently suggest a feasible route to the design of red–green–blue lasers and white‐light emitters for potential applications in full‐color displays as well as photonic devices.

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The microstructured and hyperdoped silicon as a superior photoelectric and photovoltaic material is first studied as a gas-sensing material. The material is prepared by femtosecond-laser irradiation on selenium-coated silicon and then fabricated as a conductive gas sensor, targeting ammonia. At room temperature, the sensitivity, response time, repeatability, distinguishability, selectivity, and natural aging effect of the sensor have been systematically studied. Results show that such black silicon has good potential for application as an ammonia-sensing material. On the basis of its unique optoelectronic properties, an additional optical drive is proposed for the formation of an optical and electric dual-driven sensor, which is achieved by asymmetric light illumination between the two electrode regions. In a certain range of applied voltage, the sensitivity is enhanced dramatically and even tends to be infinite. For the aged device with degraded sensitivity, a two-order increment is obtained for 500 ppm of NH under the extra optical drive. A mechanism based on Dember effect is proposed for explaining such a phenomenon.

Since the discovery of Cu-catalyzed chemical vapor deposition (CVD), the preparation of large-area graphene films has been performed by the carbon precursor exposure under isothermal conditions. In this work, we report on a nonisothermal method to quickly synthesize the largearea AB-stacked bilayer graphene films (BGF) by atmospheric pressure CVD on the copper foils. The growth feature of the BGF is carefully studied by scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The results show that both cooling rate and CH 4 flow rate play crucial roles on the BGF growth in the nonisothermal process. A phase diagram for the preparation of BGF is thereby derived from plenty of experiments. In addition, we find that bilayer graphene seeds grow into graphene islands at the initial growth stage and extend gradually to a continuous film. Accordingly, a possible growth mechanism combining with surface-catalyzed process and seed growth is proposed.

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