Light interacting with nanostructured metals excites the collective charge density fluctuations known as surface plasmons (SP). Through excitation of the localized SP eigenmodes incident light is trapped on the nanometer spatial and femtosecond temporal scales and its field is enhanced. Here we demonstrate the imaging and quantum control of SP dynamics in a nanostructured silver film. By inducing and imaging the nonlinear two-photon photoemission from the sample with a pair of identical 10-fs laser pulses while scanning the pulse delay, we record a movie of SP fields at a rate of 330-attoseconds/frame.
We have performed finite-difference time-domain (FDTD) analysis of optical transmission through a nanoslit array structure formed on a metal layer with tapered film thickness. The analysis result shows refractive transmission of light through the nanoslit array, opening up the possibility of creating metallic lenses that resemble glass lenses in their shape. Metallic lenses with curved surfaces are designed such that each nanoslit element transmits light with phase retardation controlled by the metal thickness in the aperture region. The FDTD analysis result demonstrates a focusing or collimating function of convex-shaped metal lenses.
High-speed electronic devices rely on short carrier transport times, which are usually achieved by decreasing the channel length and/or increasing the carrier velocity. Ideally, the carriers enter into a ballistic transport regime in which they are not scattered. However, it is difficult to achieve ballistic transport in a solid-state medium because the high electric fields used to increase the carrier velocity also increase scattering. Vacuum is an ideal medium for ballistic transport, but vacuum electronic devices commonly suffer from low emission currents and high operating voltages. Here, we report the fabrication of a low-voltage field-effect transistor with a vertical vacuum channel (channel length of ~20 nm) etched into a metal-oxide-semiconductor substrate. We measure a transconductance of 20 nS µm(-1), an on/off ratio of 500 and a turn-on gate voltage of 0.5 V under ambient conditions. Coulombic repulsion in the two-dimensional electron system at the interface between the oxide and the metal or the semiconductor reduces the energy barrier to electron emission, leading to a high emission current density (~1 × 10(5) A cm(-2)) under a bias of only 1 V. The emission of two-dimensional electron systems into vacuum channels could enable a new class of low-power, high-speed transistors.
We have investigated the effects of oxygen plasma treatment on the UV detection properties of ultrathin (∼20-nm-thick) ZnO epitaxial films. Highly epitaxial ZnO films grown on sapphire were exposed to oxygen-radical-rich, inductively coupled plasma, and then their UV detection properties were characterized at 325 nm wavelength using a photoconductor structure. The oxygen plasma treatment is found to dramatically enhance the UV detection properties of ZnO, reducing the decay time constant (to below 50 μs) and increasing the on/off ratio of photocurrent (to over 1000) with high UV responsivity (1–10 A/W). This result, in conjunction with the microstructural and electrical characterization results, indicates that the plasma treatment efficiently suppresses the chemisorption sites (primarily the oxygen deficiency sites) on surface and also the oxygen vacancies in ZnO, therefore results in major reduction of the chemisorption effects and the dark current, respectively.
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