2004
DOI: 10.1063/1.1640468
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Ultraviolet detection with ultrathin ZnO epitaxial films treated with oxygen plasma

Abstract: We have investigated the effects of oxygen plasma treatment on the UV detection properties of ultrathin (∼20-nm-thick) ZnO epitaxial films. Highly epitaxial ZnO films grown on sapphire were exposed to oxygen-radical-rich, inductively coupled plasma, and then their UV detection properties were characterized at 325 nm wavelength using a photoconductor structure. The oxygen plasma treatment is found to dramatically enhance the UV detection properties of ZnO, reducing the decay time constant (to below 50 μs) and i… Show more

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Cited by 200 publications
(122 citation statements)
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“…18,20,[37][38][39][40][41][42] However, as reported in sections 3.2 and 3.3 above, the absence of any significant or consistent changes in the SX peak either following both O and Ar plasma treatments or after illuminating with UV light in high vacuum lead us to conclude that the SX is not due to adsorbed O/O 2 on the nanostructure surfaces.…”
Section: Discussionmentioning
confidence: 71%
“…18,20,[37][38][39][40][41][42] However, as reported in sections 3.2 and 3.3 above, the absence of any significant or consistent changes in the SX peak either following both O and Ar plasma treatments or after illuminating with UV light in high vacuum lead us to conclude that the SX is not due to adsorbed O/O 2 on the nanostructure surfaces.…”
Section: Discussionmentioning
confidence: 71%
“…Moreover, ZnO-based photoconductors have already shown dark currents as low as 400 pA and responsivity in the range of 1-10 A/W [8].…”
Section: Wide Band Gap Energy Semiconductorsmentioning
confidence: 99%
“…As a wide bandgap semiconductor, ZnO is a promising material for potential applications such as ultraviolet (UV) light emitting diodes, laser diodes, and photodetectors [1][2][3][4][5][6]. UV detection has many applications, such as air quality monitoring, gas sensing, missile plume detection, etc.…”
Section: Introductionmentioning
confidence: 99%