High-quality Si dioxide was successfully grown at room temperature using a magnetically excited plasma oxidation technique. Helicon waves were probably excited under the growth conditions used. Excellent capacitance-voltage characteristics were obtained after annealing of these oxide films in oxygen ambient for 15 min at 300°–500°C. The growth rate was somewhat low. However, the film thickness increased substantially with annealing. X-ray photoelectron spectroscopic studies indicated that high-quality Si oxides without suboxides were grown even at room temperature.
The decompression stage of a relativistic heavy ion reaction is described within a Monte-Carlo-Time-Dependent-Hartree-Fock model suitable for quantum dynamical calculations. Temperature and compression effects lead to instabilities and nuclear disassembly. Low excited stable and high excited unstable fragments are generated. The model is based on a Monte-Carlo simulation. A statistical set of self-consistent Hartree calculations are performed. Systems with different particle number are studied. At critical break-up temperatures fragments are found in U-shaped spectra. Above the break-up threshold fast and small fragments are counted. Below the break-up threshold the excited matter shows vibrational modes. Density distributions are studied and evidence for volume dependent multifragmentation processes is obtained for most break-up temperatures. Mass spectra, multiplicities and momentum distributions are presented.
Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited ( N2 + Ar) plasma. Si oxynitride, probably Si\SubtN\SubtO, was grown only when Ar was mixed with N2, while SiO\Subt was solely formed with N2 only. At the top surface of the grown film with mixed gas, SiO\Subt was always grown due to residual oxygen in N2 gas, so that the SiO\Subt/Si\Subt N2O structure was always obtained. Good capacitance-voltage characteristics were obtained although the growth rate was somewhat low. The ( N2 + Ar) plasma treatment after deposition of Si\SubsN\Subf powder on Si was also discussed.
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