Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy

Ikenaga, Eiji; Hirosawa, Ichiro; Kitano, Akiko; Takata, Y.; Muto, Akiyoshi; Maeda, Tatsuro; Torii, Kazuo; Kitajima, Hiroyasu; Arikado, T.; Takeuchi, Akihisa; Awaji, M.; Tamasaku, Kenji; Ishikawa, Tetsuya; Komiya, Satoshi; Kobayashi, Keisuke

doi:10.1016/j.elspec.2005.01.180

Cited by 18 publications

(6 citation statements)

References 3 publications

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“…Respective XPS and HX-PES measurements were undertaken using monochromatized Al K radiation (h ¼ 1486:6 eV) and synchrotron radiation (h ¼ 7940 eV) at BL47XU at SPring-8. 18) The widths of the observed regions in XPS and HX-PES corresponded to approximately 100 -150 and 30 -50 mm, respectively. Figure 1 shows the Si 1s photoelectron spectra obtained by HX-PES from the Ir/HfO 2 /TG-SiO 2 /Si structure, which reveal that the sample contains the directcontact HfO 2 /Si structure and HfO 2 /SiO 2 /Si stack structures with SiO 2 layers of various thicknesses.…”

Section: Experimental Methodsmentioning

confidence: 91%

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO₂/SiO₂/Si Structures

Abe

Miyata

Ikenaga

et al. 2009

jjap

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We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal-and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer.

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Section: Experimental Methodsmentioning

confidence: 91%

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO₂/SiO₂/Si Structures

Abe

Miyata

Ikenaga

et al. 2009

jjap

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“…Here, we used hard-X-ray PES (HAXPES) developed at the synchrotron radiation facility SPring-8. 16,17) The long probing depths of a few tens of nm obtained by using high energy X-rays ($8 keV) closely match the thicknesses of films used for interconnect applications. Although many studies of carbon materials by low-energy PES have been reported, [18][19][20] the peak deconvolution of C 1s HAXPES spectra has not yet been established.…”

Section: Introductionmentioning

confidence: 70%

Spectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Inukai

Ikenaga

Matsuki

et al. 2013

Jpn. J. Appl. Phys.

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The degrees of graphitization of carbon films grown by photoemission-assisted plasma-enhanced chemical vapor deposition were evaluated by hard-X-ray photoemission spectroscopy (HAXPES). The films were grown with a CH4/He or CH4/Ar mixture at growth temperatures from 400 to 1000 °C. Low-temperature growth was mainly focused on. The result of HAXPES showed that the films dominantly have sp2 bonding states. The film grown at 400 °C with CH4/Ar had an sp2 content of 84%, which was comparable to those of the films grown at temperatures ≥800 °C. The orientation of the graphitic grains was also examined by soft-X-ray absorption spectroscopy. The degrees of orientation of the films were up to 70%, compared to that of highly oriented pyrolytic graphite. The film grown at 400 °C with CH4/Ar had the degree of graphitization of ∼40%, which was comparable to that for the film grown at 800 °C with CH4/He.

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“…In comparison to the conventional PES, HAXPES offers large probing depths of photoelectrons up to several nanometers with the aid of X-ray energies typically above 5 keV. Owing to this advantage, this method has been known as a powerful tool for non-destructive measurements of true bulk states and buried interfaces [13][14][15][16][17]. Therefore, HAXPES is plausibly well suitable to the purpose of this study.…”

Section: Introductionmentioning

confidence: 99%

Hard X-ray Photoelectron Spectroscopy Study of Pt/Y₃Fe₅O₁₂

Kobata

Yoshii

Fukuda

et al. 2020

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019)

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We have investigated the electronic structures of Pt/Y 3 Fe 5 O 12 (YIG) bilayers (prototypical spin-Seebeck devices), by means of hard X-ray photoelectron spectroscopy (HAXPES) using synchrotron radiation to reveal the detailed core-level electronic structures near the surface and interface that impact on unconventional magnetotransport properties in Pt/YIG systems. The PES spectra of Fe 2p, Y 3s and O1s suggest a chemical reaction at the interface between Pt and YIG. The Fe 1s spectra show the two kinds of valence states of Fe ions. The one is Fe 3+ in the YIG substrate, while the other is metallic Fe (Fe 0). In addition, the Fe 0 species are found to exist near the surface of the Pt layer. These results are consistent with the proposed origin of the anomalous properties, i.e., the presence of Fe impurities for a skew scattering.

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Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy

Cited by 18 publications

References 3 publications

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO₂/SiO₂/Si Structures

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO₂/SiO₂/Si Structures

Spectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Hard X-ray Photoelectron Spectroscopy Study of Pt/Y₃Fe₅O₁₂

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Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy

Cited by 18 publications

References 3 publications

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures

Spectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Hard X-ray Photoelectron Spectroscopy Study of Pt/Y3Fe5O12

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Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO₂/SiO₂/Si Structures

Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO₂/SiO₂/Si Structures

Hard X-ray Photoelectron Spectroscopy Study of Pt/Y₃Fe₅O₁₂