1995
DOI: 10.1143/jjap.34.4747
|View full text |Cite
|
Sign up to set email alerts
|

Helicon-Wave-Excited Plasma Treatment of SiOxFilms Evaporated on Si Substrate

Abstract: The decompression stage of a relativistic heavy ion reaction is described within a Monte-Carlo-Time-Dependent-Hartree-Fock model suitable for quantum dynamical calculations. Temperature and compression effects lead to instabilities and nuclear disassembly. Low excited stable and high excited unstable fragments are generated. The model is based on a Monte-Carlo simulation. A statistical set of self-consistent Hartree calculations are performed. Systems with different particle number are studied. At critical bre… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
4
0

Year Published

1997
1997
2009
2009

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(4 citation statements)
references
References 14 publications
0
4
0
Order By: Relevance
“…SiO x films have found their application in biomaterials, microelectronics, food and the medical and pharmaceutical industries 32. Mixtures of O 2 /SiH 4 or N 2 O/SiH 4 are commonly used for the PECVD deposition of SiO 2 33, 34. Organosilicones, which are relatively inert liquids at room temperature (RT) may be preferable to silane,35 which is an explosive gas at RT and so its use in an industrial environment requires severe safety regulations.…”
Section: Introductionmentioning
confidence: 99%
“…SiO x films have found their application in biomaterials, microelectronics, food and the medical and pharmaceutical industries 32. Mixtures of O 2 /SiH 4 or N 2 O/SiH 4 are commonly used for the PECVD deposition of SiO 2 33, 34. Organosilicones, which are relatively inert liquids at room temperature (RT) may be preferable to silane,35 which is an explosive gas at RT and so its use in an industrial environment requires severe safety regulations.…”
Section: Introductionmentioning
confidence: 99%
“…For PECVD deposition of SiO 2 , the most simple and commonly used gas feedstocks are O 2 /SiH 4 , N 2 O/SiH 4 mixtures. Deposition of good-quality silicon dioxide films in an O 2 /SiH 4 helicon plasma was recently reported in the literature, for integrated optics applications [6,7] or microelectronics devices [8,9]. However, since silane is an explosive gas at room temperature, its use in 0963-0252/97/020147+10$19.50 c 1997 IOP Publishing Ltd an industrial environment requires severe security rules.…”
Section: Introductionmentioning
confidence: 99%
“…[29][30][31] For PECVD deposition of such films, the simplest and most commonly used mixtures of gases are O 2 / SiH 4 and N 2 O/SiH 4 . 32,33 Organosiloxanes are comparatively less hazardous than silane itself and hence are preferable for silica-like coating deposition by PECVD. 34 However, until now, PECVD of organosilane for silica-like film deposition onto COP surfaces has not been studied.…”
Section: Introductionmentioning
confidence: 99%
“…Silica-like thin films deposited by PECVD offer several advantages in that they are not only colorless and optically transparent but are also insoluble and thermally stable . These characteristics have allowed silica-like films to find expanded application in biomaterials, microelectronics, food, and the medical and pharmaceutical industries. For PECVD deposition of such films, the simplest and most commonly used mixtures of gases are O 2 /SiH 4 and N 2 O/SiH 4 . , Organosiloxanes are comparatively less hazardous than silane itself and hence are preferable for silica-like coating deposition by PECVD . However, until now, PECVD of organosilane for silica-like film deposition onto COP surfaces has not been studied.…”
Section: Introductionmentioning
confidence: 99%