Magnetically Excited Plasma Oxynitridation of Si at Room Temperature

Abstract

Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited ( N2 + Ar) plasma. Si oxynitride, probably Si\SubtN\SubtO, was grown only when Ar was mixed with N2, while SiO\Subt was solely formed with N2 only. At the top surface of the grown film with mixed gas, SiO\Subt was always grown due to residual oxygen in N2 gas, so that the SiO\Subt/Si\Subt N2O structure was always obtained. Good capacitance-voltage characteristics were obtained although the growth rate was somewhat low. The ( N2 + Ar) plasma treatment after deposition of Si\SubsN\Subf powder on Si was also discussed.

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

“…Oxynitridation of Si was used for thin film deposition and the Si 2p peak was examined at progressive in situ Ar ion milling in [88]. In the middle of the film, the Si 2p peak maximum shifted to lower binding energy and this new feature was deconvoluted.…”

Growth of Transparent SiO2 Thin Film on Silicon at Room Temperatüre by Using I72nm Xe2* Excimer Lamp

“…Low temperature processing is necessary to solve such problems. The use of photo CVD, plasma CVD and TICS/H20 CVD in low temperature processing were previously reported [3][4][5]; however, the production temperature is about 200°C and can not fabricate a transparent film. Recently, SiO2 film production methods at room temperature by using magnetically-excited plasma and TEOS have been reported [6,7].…”