Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Abstract

The quantitative analysis of thin films containing light elements is very important in improving the coating processes and technological properties of the products. In order to review the state of the art of modern analytical techniques for such applications, the model systems SiOXNY and AlOXNY were selected. Over 1000 abstracts were screened, and the relevant literature was evaluated to give a comprehensive overview of instruments, analytical procedures and results, film types, deposition methods, and investigation goals. From more than 150 citations, the limitations, drawbacks, and pitfalls of the different methods were extracted and reviewed critically, while in addition, improvements were proposed where possible. These suggestions are combined with the newest results of investigation by the authors of this paper. Recommendations concerning the optimized combination of analytical methods for different analytical problems have been worked out on the basis of all results. Analysis of various multicomponent systems containing light elements demonstrated the applicability of the different methods of analysis in combination to all film systems with related compositions.

Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

“…Thus we focus on the Si-H bond density. Figure 2 shows the FTIR spectra in the range of the absorption band assigned to Si-H bonds [30].…”

Effect of oxidation on the chemical bonding structure of PECVD SiNx thin films

“…[12][13][14][15][16][17][18][19][20][21][22][23][24][25] In principle, there exist two possible distinctive atomic bonding structures, i.e., the "random bonding structure" and the "random mixing structure," both having been experimentally verified. The presence of multiple constituents imposes possibilities of various structures to the otherwise uniform amorphous body of the films.…”

Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells

“…5. The band in the 1040-1150 cm -1 range is assigned to the stretching vibration mode Si-O [29][30][31]. A clear increase of this intensity peak is observed for the PS/SiO x layer, which is related to the high oxygen content in this layer, which contributes to the surface passivation.…”

“…A clear increase of this intensity peak is observed for the PS/SiO x layer, which is related to the high oxygen content in this layer, which contributes to the surface passivation. In addition a strong Si-N resonance is also observed between 830-860 cm -1 (stretching mode with Si 3 N 4 ) [29,31,32] in PS/SiN x structure, related to the high nitrogen content of the SiN. On the other hand the relatively weak peak Si-H observed at 870 cm -1 bending vibration [33] in PS/SiO x and PS/SiN x show that the major part of hydrogen is diffused into the PS interface, and the dangling bonds Si-H are substituted by the compact Si-O and Si-N dangling bonds leading to an improvement of the surface passivation.…”