Modern spintronics relies on the generation of spin currents through spin-orbit coupling. The spin-current generation has been believed to be triggered by current-induced orbital dynamics, which governs the angular momentum transfer from the lattice to the electrons in solids. The fundamental role of the orbital response in the angular momentum dynamics suggests the importance of the orbital counterpart of spin currents: orbital currents. However, evidence for its existence has been elusive. Here, we demonstrate the generation of giant orbital currents and uncover fundamental features of the orbital response. We experimentally and theoretically show that orbital currents propagate over longer distances than spin currents by more than an order of magnitude in a ferromagnet and nonmagnets. Furthermore, we find that the orbital current enables electric manipulation of magnetization with efficiencies significantly higher than the spin counterpart. These findings open the door to orbitronics that exploits orbital transport and spin-orbital coupled dynamics in solid-state devices.

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The emerging field of orbitronics exploits the electron orbital momentum L. Compared to spin-polarized electrons, L may allow the transfer of magnetic information with considerably higher density over longer distances in more materials. However, direct experimental observation of L currents, their extended propagation lengths and their conversion into charge currents has remained challenging. Here, we optically trigger ultrafast angular-momentum transport in Ni|W|SiO2 thin-film stacks. The resulting terahertz charge-current bursts exhibit a marked delay and width that grow linearly with the W thickness. We consistently ascribe these observations to a ballistic L current from Ni through W with a giant decay length (~80 nm) and low velocity (~0.1 nm fs−1). At the W/SiO2 interface, the L flow is efficiently converted into a charge current by the inverse orbital Rashba–Edelstein effect, consistent with ab initio calculations. Our findings establish orbitronic materials with long-distance ballistic L transport as possible candidates for future ultrafast devices and an approach to discriminate Hall-like and Rashba–Edelstein-like conversion processes.