We reported 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography one year ago 1) . In this paper we update performance status of the 1st generation system. We have improved the system further, maximum burst power is 104W (100kHz, 1 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.5%. Also continuous operation time is so far up to 8 hours with 5% duty cycle is achieved. We have investigated EUV plasma creation scheme by small experimental device which is facilitated 10Hz operation (maximum). We have proposed double pulse method to create LPP plasma efficiently. This moment we found out 3.3% conversion efficiency operation condition.Based on the engineering data of ETS and small experimental device, now we are developing 2 nd generation HVM source; GL200E. The device consists of the original concepts (1) CO 2 laser driven Sn plasma, (2) Hybrid CO 2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO 2 , (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. The preliminary data are introduced in this paper.
The 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography is under development. We report latest status of the device which consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid CO2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. Maximum burst on time power is 69W (100kHz, 0.7 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.3%, duty cycle is 20% at maximum. Continuous operation time is so far up to 3 hours. Debris is efficiently suppressed by pre-pulse plasma formation and magnetic field mitigation system. Long-term performance is now under investigation. Also future plan is updated
Since 2002, we have been developing a CO 2-Sn-laser plasma produced (LPP) extreme-ultraviolet (EUV) light source, the most promising solution as the 13.5-nm high-power (> 200 W) light source for high-volume manufacturing (HVM) EUV lithography. Because of its high efficiency, power scalability, and spatial freedom around plasma, we believe that the CO 2-Sn-LPP scheme is the most feasible candidate as the light source for EUVL. By now, our group has proposed several unique original technologies, such as CO 2 laser-driven Sn plasma generation, double-laser pulse shooting for higher Sn ionization rate and higher CE, Sn debris mitigation with a magnetic field, and a hybrid CO 2 laser system that is a combination of a short-pulse oscillator and commercial cw-CO 2 amplifiers. The theoretical and experimental data have clearly demonstrated the advantage of combining a laser beam at a wavelength of the CO 2 laser system with Sn plasma to achieve high CE from driver laser pulse energy to EUV in-band energy. We have the engineering data from our test tools, which include 20-W average clean power, CE ¼ 2.5%, and 7 h of operating time; the maximum of 3.8% CE with a 20-μm droplet, 93% Sn ionization rate, and 98% Sn debris mitigation by a magnetic field. Based on these data, we are developing our first light source for HVM: "GL200E." The latest data and the overview of EUV light source for the HVM EUVL are reviewed in this paper.
We have been developing CO 2 -Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as: combination of pulsed CO 2 laser and Sn droplets, dual wavelength laser pulses shooting, and mitigation with magnetic field, have been developed in Gigaphoton Inc. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. Based on these data we are developing first practical source for HVM: "GL200E". This data means 250W EUV power will be able to realize around 20kW level pulsed CO 2 laser. We have reported engineering data from our recent test such around 43W average clean power, CE=2.0%, with 100kHz operation and other data 19) . We have already finished preparation of higher average power CO 2 laser more than 20kW at output power cooperate with Mitsubishi Electric Corporation 14) . Recently we achieved 92W with 50kHz, 50% duty cycle operation 20) . We have reported component technology progress of EUV light source system.We report promising experimental data and result of simulation of magnetic mitigation system in Proto #1 system. We demonstrated several data with Proto #2 system: (1) emission data of 140W in burst under 70kHz 50% duty cycle during 10 minutes. (2) emission data of 118W in burst under 60kHz 70% duty cycle during 10 minutes. (3) emission data of 42W in burst under 20kHz 50% duty cycle (10000pls/0.5ms OFF) during 3 hours (110Mpls). Also we report construction of Pilot #1 system. Final target is week level operation with 250W EUV power with CE=4%, more than 27kW CO 2 laser power by the end of Q2 of 2015.
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