The 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography is under development. We report latest status of the device which consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid CO2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. Maximum burst on time power is 69W (100kHz, 0.7 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.3%, duty cycle is 20% at maximum. Continuous operation time is so far up to 3 hours. Debris is efficiently suppressed by pre-pulse plasma formation and magnetic field mitigation system. Long-term performance is now under investigation. Also future plan is updated
We reported 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography one year ago 1) . In this paper we update performance status of the 1st generation system. We have improved the system further, maximum burst power is 104W (100kHz, 1 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.5%. Also continuous operation time is so far up to 8 hours with 5% duty cycle is achieved. We have investigated EUV plasma creation scheme by small experimental device which is facilitated 10Hz operation (maximum). We have proposed double pulse method to create LPP plasma efficiently. This moment we found out 3.3% conversion efficiency operation condition.Based on the engineering data of ETS and small experimental device, now we are developing 2 nd generation HVM source; GL200E. The device consists of the original concepts (1) CO 2 laser driven Sn plasma, (2) Hybrid CO 2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO 2 , (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. The preliminary data are introduced in this paper.
Since 2002, we have been developing a CO 2-Sn-laser plasma produced (LPP) extreme-ultraviolet (EUV) light source, the most promising solution as the 13.5-nm high-power (> 200 W) light source for high-volume manufacturing (HVM) EUV lithography. Because of its high efficiency, power scalability, and spatial freedom around plasma, we believe that the CO 2-Sn-LPP scheme is the most feasible candidate as the light source for EUVL. By now, our group has proposed several unique original technologies, such as CO 2 laser-driven Sn plasma generation, double-laser pulse shooting for higher Sn ionization rate and higher CE, Sn debris mitigation with a magnetic field, and a hybrid CO 2 laser system that is a combination of a short-pulse oscillator and commercial cw-CO 2 amplifiers. The theoretical and experimental data have clearly demonstrated the advantage of combining a laser beam at a wavelength of the CO 2 laser system with Sn plasma to achieve high CE from driver laser pulse energy to EUV in-band energy. We have the engineering data from our test tools, which include 20-W average clean power, CE ¼ 2.5%, and 7 h of operating time; the maximum of 3.8% CE with a 20-μm droplet, 93% Sn ionization rate, and 98% Sn debris mitigation by a magnetic field. Based on these data, we are developing our first light source for HVM: "GL200E." The latest data and the overview of EUV light source for the HVM EUVL are reviewed in this paper.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.