100W 1st generation laser-produced plasma light source system for HVM EUV lithography

Mizoguchi, Hideaki; Abe, Tamotsu; Watanabe, Yukio; Ishihara, Takanobu; Ohta, Takao; Hori, Tsukasa; Yanagida, Takeshi; Nagano, Hitoshi; Yabu, Takayuki; Nagai, Shinji; Soumagne, Georg; Kurosu, Akihiko; Nowak, K.; Suganuma, Takashi; Moriya, Masato; Kakizaki, Kouji; Sumitani, Akira; Kameda, Hidenobu; Nakarai, Hiroaki; Fujimoto, Junichi

doi:10.1117/12.880382

Cited by 25 publications

(18 citation statements)

References 9 publications

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“…Experimental results given in Ref. 1 for the same droplet diameter as in our study showed 2.3% CE "with a pre-pulse irradiation" and 3.25% CE "with improved pre-pulse irradiation". We obtained in our simulations 3% CE that is close to the above data.…”

Section: Introductionmentioning

confidence: 50%

“…8,9 The second one is related to utilizing the evaporated and fragmented parts of the droplet. 1 Heating of this matter is reasonable after delay in the ls range, since velocities of this components is 10-100 times lower than plasma velocity 10 and spatial expansion of such matter to areas covered by the larger plasma spot requires longer time.…”

Section: Introductionmentioning

confidence: 99%

“…1,2 Tin is considered to be the target of interest for producing plasmas, as its plasma emits strongly in the EUVL in-band region (13.5 nm with 2% bandwidth), contributed by various ionic stages (Sn 8þ -Sn 14þ ). 3,4 However, the efficient release of 13.5 nm radiation by the plasma is related to plasma opacity, which depends on level populations of different ionic states, ionization balance, and electron density.…”

Section: Introductionmentioning

confidence: 99%

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Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography

Sizyuk

Hassanein

2012

Physics of Plasmas

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Current challenges in the development of efficient laser produced plasma sources for the next generation extreme ultraviolet lithography (EUVL) are increasing EUV power and maximizing lifetime and therefore, reducing cost of devices. Mass-limited targets such as small tin droplets are considered among the best choices for cleaner operation of the optical system because of lower mass of atomic debris produced by the laser beam. The small diameter of droplets, however, decreases the conversion efficiency (CE) of EUV photons emission, especially in the case of CO 2 laser, where laser wavelength has high reflectivity from the tin surface. We investigated ways of improving CE in mass-limited targets. We considered in our modeling various possible target phases and lasers configurations: from solid/liquid droplets subjected to laser beam energy with different intensities and laser wavelength to dual-beam lasers, i.e., a pre-pulse followed by a main pulse with adjusted delay time in between. We studied the dependence of vapor expansion rate, which can be produced as a result of droplet heating by pre-pulse laser energy, on target configuration, size, and laser beam parameters. As a consequence, we studied the influence of these conditions and parameters on the CE and debris mass accumulation. For better understanding and more accurate modeling of all physical processes occurred during various phases of laser beam/ target interactions, plasma plume formation and evolution, EUV photons emission and collection, we have implemented in our HEIGHTS package state-of-the art models and methods, verified, and benchmarked against laboratory experiments in our CMUXE center as well as various worldwide experimental results. V C 2012 American Institute of Physics. [http://dx.

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Section: Introductionmentioning

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography

Sizyuk

Hassanein

2012

Physics of Plasmas

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“…Although availability of a reliable high power source [2][3][4] is arguably the most daunting of these challenges, several mask issues are also of major concern. The most pressing and well known of these issues is mask defectivity [5].…”

Section: Introductionmentioning

confidence: 99%

Mask roughness challenges in extreme ultraviolet mask development

Naulleau¹,

McClinton²,

Goldberg³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Despite significant progress in the commercialization of extreme ultraviolet (EUV) lithography, many challenges remain. Although availability of a reliable high power source is arguably the most daunting of these challenges, important mask issues are also of major concern. The issues of EUV phase roughness that can arise from either multilayer or capping layer roughness has recently become of increasing concern. The problem with mask phase roughness is that it couples to image plane speckle and thus line-edge roughness (LER). The coupling, however, depends on many factors including roughness magnitude, roughness correlation length, illumination partial coherence, aberrations and defocus, and numerical aperture. Analysis shows that only on the order of 50 pm multilayer roughness may be tolerable at the 22-nm half-pitch node. The analysis, however, also shows that the difficulty does not scale with future node reductions.Moreover, it is found that ruthenium is a particularly bad choice for capping layer from the perspective of phase roughness and that cleaning damage in such a multilayer could lead to unacceptable image-plane LER.

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“…The CO 2 -Sn-LPP EUV light source is deemed to be the most promising solution, as the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing (HVM) EUV lithography (EUVL) [1][2][3][4], because of the high efficiency, power scalability, and spatial freedom around plasma. Therefore, we have chosen the LPP-EUV method.…”

Section: Introductionmentioning

confidence: 99%

Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

Fujimoto¹,

Hori²,

Yanagida³

et al. 2012

Physics Research International

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Since 2002, we have been developing a carbon dioxide (CO 2 ) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used for its high efficiency, power scalability, and spatial freedom around plasma. We believe that the LPP scheme is the most feasible candidate for the EUV light source for industrial use. We have several engineering data from our test tools, which include 93% Sn ionization rate, 98% Sn debris mitigation by a magnetic field, and 68% CO 2 laser energy absorption rate. The way of dispersion of Sn by prepulse laser is key to improve conversion efficiency (CE). We focus on prepulsed laser pulsed duration. When we have optimized pulse duration from nanosecond to picosecond, we have obtained maximum 4.7% CE

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100W 1st generation laser-produced plasma light source system for HVM EUV lithography

Cited by 25 publications

References 9 publications

Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography

Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography

Mask roughness challenges in extreme ultraviolet mask development

Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

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