2012
DOI: 10.1155/2012/249495
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Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

Abstract: Since 2002, we have been developing a carbon dioxide (CO 2 ) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used for its high efficiency, power scalability, and spatial freedom around plasma. We believe that the LPP scheme is the most feasible candidate for the EUV light source for industrial use. We have several engineering data… Show more

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Cited by 16 publications
(5 citation statements)
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References 14 publications
(18 reference statements)
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“…A not−so−rough estimate of the required laser power for a pulse of 10ns FWHM duration and a peak intensity of 1·10 11 Wcm -2 on a~200 μm diameter [34] of the EUV emitting plasma [31] is possible with a knowledge of em− pirical CE values reported so far. Assuming a top−hat beam profile, one gets 315 mJ of required laser pulse energy, which after accounting for an experimental CE of 2.5% [35] obtained with~20 ns pulses and~25% of total EUV collection and transmission efficiency up to the IF of the source, yields about 2 mJ of in−band EUV energy per pulse of 10ns duration. The CO 2 laser driver must therefore deliver at least 18.1 kW average power to satisfy the HVM power requirement, with pulse repetition frequency higher than 57.5 kHz.…”
Section: Pulse Format Requirements For 135 Nm Lpp Euv Sourcementioning
confidence: 99%
“…A not−so−rough estimate of the required laser power for a pulse of 10ns FWHM duration and a peak intensity of 1·10 11 Wcm -2 on a~200 μm diameter [34] of the EUV emitting plasma [31] is possible with a knowledge of em− pirical CE values reported so far. Assuming a top−hat beam profile, one gets 315 mJ of required laser pulse energy, which after accounting for an experimental CE of 2.5% [35] obtained with~20 ns pulses and~25% of total EUV collection and transmission efficiency up to the IF of the source, yields about 2 mJ of in−band EUV energy per pulse of 10ns duration. The CO 2 laser driver must therefore deliver at least 18.1 kW average power to satisfy the HVM power requirement, with pulse repetition frequency higher than 57.5 kHz.…”
Section: Pulse Format Requirements For 135 Nm Lpp Euv Sourcementioning
confidence: 99%
“…Coherent light from pulsed lasers, focused onto gaseous, liquid, or solid targets, can induce plasmas that are capable of emitting radiation from the soft X-ray [3] to the mid-infrared region [4]. Very hot plasmas, emitting in the EUV, can be generated by employing high powered, high repetition rate (>MHz) pulsed lasers focused onto a high pressure, pulsed jet of xenon gas that is sometimes mixed with particulate matter (e.g., Sn) to promote laser absorbance [5,6]. Another promising candidate for the generation of EUV radiation is pulsed capillary discharge sources [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…The latter solution reduces the amount of backscattered light and by decoupling both laser systems it prevents instabilities and potential damage to the lasers, at the expense of added complexity in the EUV lithography machine. The interaction between a tin droplet and a nanosecond pre-pulse leads to the generation of a high-density disk target and results in a reported conversion efficiency of 4.7% [25]. Alternatively, a picosecond pre-pulse could be employed that expands the droplet to a low-density diffuse target resembling an acorn [26,27], which has a significantly higher surface to volume ratio compared to a disk target, ensuring improved light absorption and, consequently, higher CE with the maximum reported value of 6% [1].…”
mentioning
confidence: 99%