2010
DOI: 10.1117/12.846271
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First generation laser-produced plasma source system for HVM EUV lithography

Abstract: The 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography is under development. We report latest status of the device which consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid CO2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. Maximum burst on time power is 69W (100kHz, 0.7 mJ EUV power @ intermediate focus), laser-EUV conversion e… Show more

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Cited by 33 publications
(18 citation statements)
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“…We reported 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography one year ago 1) . In this paper we update performance status of the 1st generation system.…”
Section: Resultsmentioning
confidence: 99%
“…We reported 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography one year ago 1) . In this paper we update performance status of the 1st generation system.…”
Section: Resultsmentioning
confidence: 99%
“…An important application of drop deformation by laser-pulse impact is found in laserproduced plasma light-sources for extreme ultraviolet (EUV) nanolithography. In these sources a nanosecond laser pulse pre-shapes a falling liquid tin drop into a thin sheet, which is subsequently ionized by a second laser pulse (Mizoguchi et al 2010;Banine et al 2011). To maximize the conversion of liquid tin to plasma a precise control of the drop shape and stability that result from the first laser impact is crucial.…”
Section: Introductionmentioning
confidence: 99%
“…[17,18] Achieving the required droplet stability is a challenging task, even more so when small source sizes for increased brightness are required. In general two types of instabilities are distinguished: lateral (in the plane perpendicular to the jet velocity) instabilities and drop-to-drop jitter.…”
Section: Introductionmentioning
confidence: 99%