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Tin Selenide (SnSe), a group IV-VI compound semiconductor material is used to fabricate various solid state devices such as memory switching devices, P-N junction diodes, Schottky barrier diodes, etc. In...

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SnSe, the well-known transition metal chalcogenide family member is perceived to be preferable for its tremendous device applications. Here, the authors have tried to fabricate a p-SnSe/Cu Schottky junction diode. The Capacitance(C)–Voltage (V) & Conductance(C)–Voltage(V) characteristics with different frequency(f) of the fabricated diode were studied at the applied bias voltage -1 to 1 V in f range from the 0.1 MHz to 1 MHz at room temperature. Effect of applied Frequencies on various parameter: Series Resistance (Rs), Insulator layer capacitance (Cox), and Interface States density (Nss) were evaluated by means of maximum capacitance (Cm) along with maximum conductance (Gm) in the region were strong gathering region. From the results confirm negative resistance at low frequencies due to negative reactance, but at high frequencies resistance becomes positive, which depicts novel capacitive properties which can be applicable for novel applications of SnSe-based diode.

DVT grown SnSbSe crystals were characterized using E-DAX, XPS, XRD, SEM, HRTEM, UV, PL and Raman characterizations. Photodetection parameters depict the improvement in the stability and durability of device for SbSnSe photodetector compare to SnSe.