Abstract:SnSe, the well-known transition metal chalcogenide family member is perceived to be preferable for its tremendous device applications. Here, the authors have tried to fabricate a p-SnSe/Cu Schottky junction diode. The Capacitance(C)–Voltage (V) & Conductance(C)–Voltage(V) characteristics with different frequency(f) of the fabricated diode were studied at the applied bias voltage -1 to 1 V in f range from the 0.1 MHz to 1 MHz at room temperature. Effect of applied Frequencies on various parameter: Series Re… Show more
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