2022
DOI: 10.1016/j.optmat.2022.112756
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Self-powered anisotropic photo-responsive properties of tin mono-selenide (SnSe) photodetector

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Cited by 10 publications
(2 citation statements)
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“…SnSe is a potential candidate to obtain high thermoelectric efficiency as its figure of merit reaches ∼2.6 at 923 K, supporting the development of SnSe in tailoring high-performance thermoelectric conversion devices . The potential use of SnSe in energy storage, hydrogen evolution, and optoelectronics devices has also been indicated in recent studies. Multiple phases of SnS and SnSe, including unique nanoscale phases, have been discovered and shown to possess versatile properties, including small electron effective mass, ultralow thermal conductivity, huge anisotropy, and high optical absorption coefficients . Fundamental research on the interplay between electron distribution and interatomic bonding in SnS and SnSe, as well as their cooperative effects in the lattice structure, is a major avenue to implementing their unique properties. , …”
Section: Introductionmentioning
confidence: 97%
“…SnSe is a potential candidate to obtain high thermoelectric efficiency as its figure of merit reaches ∼2.6 at 923 K, supporting the development of SnSe in tailoring high-performance thermoelectric conversion devices . The potential use of SnSe in energy storage, hydrogen evolution, and optoelectronics devices has also been indicated in recent studies. Multiple phases of SnS and SnSe, including unique nanoscale phases, have been discovered and shown to possess versatile properties, including small electron effective mass, ultralow thermal conductivity, huge anisotropy, and high optical absorption coefficients . Fundamental research on the interplay between electron distribution and interatomic bonding in SnS and SnSe, as well as their cooperative effects in the lattice structure, is a major avenue to implementing their unique properties. , …”
Section: Introductionmentioning
confidence: 97%
“…Diodes based on such junctional interface with comparably short barrier height are preferred for device applications create suitability of operated under the condition of cryogenic temperatures and other like IR-detectors or sensors, radars systems, switching circuits etc. [1] Such diodes can emerge out as relatively fast charge reveled as quick-electrical responses.…”
Section: Introductionmentioning
confidence: 99%