2021
DOI: 10.1007/s11664-021-09043-y
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Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode

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Cited by 21 publications
(14 citation statements)
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“…Shiny grey crystals and powder were collected after the growth process. 11,14,22 The thin-film-based metal and semiconductor materials were deposited on a glass substrate using the thermal evaporation technique using a Hind-High Vacuum coating unit (Model No. 12A4D).…”
Section: Methodsmentioning
confidence: 99%
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“…Shiny grey crystals and powder were collected after the growth process. 11,14,22 The thin-film-based metal and semiconductor materials were deposited on a glass substrate using the thermal evaporation technique using a Hind-High Vacuum coating unit (Model No. 12A4D).…”
Section: Methodsmentioning
confidence: 99%
“…The interface properties of the M-S contacts have a dominant influence on the device performance, reliability and stability. Various metals are deposited on TMCs resulted into metal semiconductor junctions and formed SBD such as In/p-SnSe, 22 Ag/p-SnSe 23 and Al/p-SnSe. 24 There are numerous methods to find out SBD parameters like barrier height, ideality factor, series resistance, and related parameters.…”
Section: Introductionmentioning
confidence: 99%
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“…As is known, thermionic emission theory is typically used to investigate the influence of temperature fluctuations on the ideality factor and effective barrier height of devices [46]. In practice, Schottky barrier devices operate at temperatures ranging from low to high (depending on the power application) [47]. In our study, measurements were taken at different temperatures between 200 K and 400 K with 100 K steps.…”
Section: Au/n-si and Au/pinus Brutia/n-si Devices Performacesmentioning
confidence: 99%
“…These materials are easy to synthesize and can be utilized for numerous applications such as optoelectronics, solar cells, photocatalysis, spintronics, supercapacitors, and self-powered photodetectors. 1,[7][8][9][10][11][12][13][14][15][16] S-TMCs are TX 2 or TX (T is transition atom like Sn, W, Mo and X is chalcogen such as S, Se, Te) type layered structures through covalent bonds and the layers are interconnected through weak van der Waal's interactions. S-TMCs have improved device properties like high mobility, high carrier concentration, quick on/off response due to robust light matter interaction, & good in-plane thermal conductivity.…”
Section: Introductionmentioning
confidence: 99%