Si wafers were directly bonded to 6H-SiC wafers without the formation of an intermediate layer. Heterojunctions of n-Si/n-SiC and p-Si/n-SiC exhibited ohmic and rectifying characteristics, respectively, as expected based on their band lineups. Band bending of Si at the bonded interface was observed for Si/semi-insulating 6H-SiC heterointerfaces. This band bending can be explained by either heterojunction formation based on Anderson’s model or the existence of negative charge with a density of ~2 × 1010 cm−2 at the Si/SiC interface.
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