&lt;title&gt;Subquarter micron optical lithography with practical superresolution technique&lt;/title&gt;

Ogawa, Tohru; Uematsu, Masaya; Uesawa, Fumikatsu; Kimura, Mitsumori; Shimizu, Hideo; Oda, Tatsuji

doi:10.1117/12.209302

Cited by 9 publications

(2 citation statements)

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“…[10][11][12] With regard to a balanced through-pitch lithographic performance, the attenuated PSM approach is a more potential candidate to cooperate with modified illumination methods because of its well-known effectiveness in enhancing the imaging performance of isolated patterns. 13,14 The combination of modified illuminations with attenuated PSMs has been tested experimentally for contact-hole patterning, 6,9,[15][16][17] but few discussions were drawn on the mask-specific optimization of illuminations.…”

Section: Introductionmentioning

confidence: 99%

“…The so-called ''weak'' approach to off-axis illuminations can improve the across-pitch lithographic performance at the expense of reducing the performance improvement at the specific pitch values. 6,7 With this modified illumination technique, a satisfactory common process window for one-dimensional line/space patterns can be achieved using a conventional binary mask. 8,9 When it comes to two-dimensional window patterns, due to the complexity of the diffraction nature, additional mask shape modification as well as phase-shifting mask ͑PSM͒ technologies are required to manipulate the magnitudes or phases of certain diffraction orders for synergistic combination with a custom illumination scheme.…”

Section: Introductionmentioning

confidence: 99%

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Customized illumination aperture filter design for through-pitch focus latitude enhancement of deep submicron contact hole printing

Chou

Lou

Liang

et al. 2002

J. Micro/Nanolith. MEMS MOEMS

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A simple graphic analysis technique named the illumination chart method is introduced to aid the customization of the illumination aperture filter for synergistic combination with a high transmission rimtype attenuated phase-shifting mask (PSM) for deep submicron contact hole printing. This graphic method gives direct visualization of the relationship between the interference condition in the pupil and the incident angle of illumination. The working ranges of oblique illuminations with different numbers of diffraction beams taking part in imaging can be easily clarified by this graphic method, which explains the dependence of depth of focus (DOF) on pattern duty. A customized illumination aperture filter (CIF) is synthesized by collecting the effective source elements for every pattern pitch to remedy the inability of the attenuated PSM for dense patterns. To preserve the merits of off-axis illumination to dense patterns and on-axis illuminations to sparse patterns in a single exposure, the illumination chart suggests a zeroth-order-reduction mask design for dense hole pattern. We applied this integrated resolution enhancement technique to 0.17 m contact hole printing in 248 nm wavelength, 0.55 numerical aperture optics. The experimental results show our CIF illumination not only balances the DOF enhancement throughout the pattern pitches but also suppresses the best focus shift due to spherical aberration. © 2002 Society of Photo-Optical Instrumentation Engineers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Customized illumination aperture filter design for through-pitch focus latitude enhancement of deep submicron contact hole printing

Chou

Lou

Liang

et al. 2002

J. Micro/Nanolith. MEMS MOEMS

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Aperture-modulated Diffusers (AMDs)

Herzig¹,

Kipfer²

1999

Springer Series in OPTICAL SCIENCES

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Extension of krypton fluoride excimer laser lithography to the fabrication of 0.18 μm devices

Ogawa

Uematsu

Takeuchi

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A primary standard for 157 nm excimer laser measurements AIP Conf.This article presents the extension of krypton fluoride ͑KrF͒ excimer laser lithography. An 0.18 m device can be fabricated by KrF excimer laser lithography when weak off-axis illumination is combined with an attenuated phase-shifting mask, a high-performance antireflective layer, and a high-numeral-aperture exposure tool. A 1.0 m depth-of-focus can be achieved for 0.18 m rule logic patterns. The weak off-axis illumination can reduce the influences of the secondary peak in the high-duty periodic patterns, and retain the depth-of-focus for isolated patterns when it is used in combination with an attenuated phase-shifting mask. A high-performance antireflective layer can increase the depth-of-focus because a uniformly exposed area in the photoresist can be formed when the light reflected from the substrate is eliminated.

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<title>Subquarter micron optical lithography with practical superresolution technique</title>

Cited by 9 publications

References 0 publications

Customized illumination aperture filter design for through-pitch focus latitude enhancement of deep submicron contact hole printing

Customized illumination aperture filter design for through-pitch focus latitude enhancement of deep submicron contact hole printing

Aperture-modulated Diffusers (AMDs)

Extension of krypton fluoride excimer laser lithography to the fabrication of 0.18 μm devices

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