Low-energy photoelectron imaging spectroscopy of nitromethane anions: Electron affinity, vibrational features, anisotropies, and the dipole-bound state J. Chem. Phys. 130, 074307 (2009); 10.1063/1.3076892Effect of excess electron and one water molecule on relative stability of the canonical and zwitterionic tautomers of glycine Nitrobenzene anions (NB Ϫ ) in both valence and dipole bound states are examined using laser ͑photodetachment͒ photoelectron and Rydberg electron transfer ͑RET͒ spectroscopies. Photoelectron spectroscopy of the valence NB Ϫ anion yields a valence ͑adiabatic͒ electron affinity of 1.00Ϯ0.01 eV. The reaction rates for charge transfer between atoms of cesium and xenon in high Rydberg states ͓Cs(ns,nd) and Xe(n f )͔ and NB exhibit a prominent peak in their n-dependencies consistent with the formation of a dipole bound anion having an electron affinity of 28 meV. Para-dinitrobenzene ͑pDNB͒ has a zero dipole moment and a large quadrupole moment. RET studies with pDNB show a complex n-dependence. The rate of formation of pDNB Ϫ ions exhibits a broad peak at low n-values and a second very broad feature extending to large n-values. The peak at low n is tentatively attributed to charge exchange into a quadrupole bound state (EA qb ϭ25 meV). The absence of field-detachment for these ions suggests that if these are in a quadrupole bound state they are strongly coupled to the valence state. Meta-dinitrobenzene ͑mDNB͒ has a large dipole moment and a small quadrupole moment. The observation of a weak but narrow peak at a low n-value in the RET measurement is consistent with electron attachment into a primarily dipole bound state (EA db ϭ68 meV) which is also strongly coupled to the valence state.
Highly concentrated ͑Ͼ93 vol %͒ ozone (O 3) gas was used to oxidize silicon for obtaining high-quality SiO 2 film at low temperature. Compared to O 2 oxidation, more than 500°C lower temperature oxidation ͑i.e., from 830 to 330°C͒ has been enabled for achieving the same SiO 2 growth rate. A 6 nm SiO 2 film, for example, could be grown at 600°C within 3 min at 900 Pa O 3 atmosphere. The temperature dependence of the oxidation rate is relatively low, giving an activation energy for the parabolic rate constant of 0.32 eV. Furthermore, a 400°C grown SiO 2 film was found to have satisfactory electrical properties with a small interface trap density (5ϫ10 10 cm Ϫ2 /eV) and large breakdown field ͑14 MV/cm͒.
Articles you may be interested inNeutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays AIP Conf.Investigation of a rf inductively coupled plasma ion source capable of highly uniform and collimated ion-beam generation Rev. Sci. Instrum. 77, 03B515 (2006); 10.1063/1.2172349Experimental study of electron-and ion-beam properties on the BNL electron-beam ion source and comparison with theoretical models Rev. Sci. Instrum. 77, 03A910 (2006); 10.1063/1.2149377
Current research and development topics on gas cluster ion-beam processesTetrairidium dodecacarbonyl, Ir 4 ͑CO͒ 12 , is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, it has been demonstrated that stable ion beams of Ir 4 ͑CO͒ 7 + were produced. Energy dependence of sputtering yield of silicon bombarded with Ir 4 ͑CO͒ 7 + ions was investigated at a beam energy from 2 to 10 keV at normal incidence. Experimental results showed that the sputtering yield varied substantially with beam energy. The sputtering yield at 10 keV was higher than that with SF 5 + or Ar + ions by a factor of 3-24, whereas the sputtering yield at 3 keV was lower than that with Ar + ions. In the case of 2 keV, deposition was found to occur. The substantial variation in the sputtering yields was examined using empirical equations for calculating sputtering yields. It was shown that the high sputtering yield at 10 keV would be due to what is called "nonlinear effect" unique to complex-projectile bombardment. It was also indicated that the substantial variation in the sputtering yield would result from lower kinetic energies of each atom constituting the cluster ions. Further, the deposition was explained by considering changes in surface properties caused by the irradiation of the cluster ions.
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