High-quality SiO2 film formation by highly concentrated ozone gas at below 600 °C

Nishiguchi, Tetsuya; Nonaka, Hidehiko; Ichimura, Shingo; Morikawa, Yoshiki; Kekura, Mitsuru; Miyamoto, Masaharu

doi:10.1063/1.1507829

Cited by 44 publications

(45 citation statements)

References 19 publications

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“…The value of E a was estimated as 0.35 eV, which is only 1/4 of that for dry O 2 oxidation (1.34 eV) [66], indicating a significant promotion of the oxide growth by atomic oxygen. This value coincides with that for an oxidation process in concentrated (∼97%) O 3 [65]. In addition, a deviation from the Arrhenius dependence below ∼350 • C, which is probably due to a change in the rate-determining process, was also observed for the O 3 oxidation process.…”

Section: Formation Of a Thin Oxide Layer On Siliconsupporting

confidence: 62%

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New functionalities in abundant element oxides: ubiquitous element strategy

Hosono

Hayashi

Kamiya

et al. 2011

Science and Technology of Advanced Materials

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While most ceramics are composed of ubiquitous elements (the ten most abundant elements within the Earth's crust), many advanced materials are based on rare elements. A 'rare-element crisis' is approaching owing to the imbalance between the limited supply of rare elements and the increasing demand. Therefore, we propose a 'ubiquitous element strategy' for materials research, which aims to apply abundant elements in a variety of innovative applications. Creation of innovative oxide materials and devices based on conventional ceramics is one specific challenge. This review describes the concept of ubiquitous element strategy and gives some highlights of our recent research on the synthesis of electronic, thermionic and structural materials using ubiquitous elements.

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Section: Formation Of a Thin Oxide Layer On Siliconsupporting

confidence: 62%

“…In this subsection, surface oxidation of Si is examined. Low-temperature formation of ultrathin oxide layers on semiconductors [63][64][65] is particularly important in the microelectronics industry for high-density device fabrication on glass or plastic substrates.…”

Section: Formation Of a Thin Oxide Layer On Siliconmentioning

confidence: 99%

New functionalities in abundant element oxides: ubiquitous element strategy

Hosono

Hayashi

Kamiya

et al. 2011

Science and Technology of Advanced Materials

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“…12 However, Nishiguchi et al applied the Deal-Grove model to ultrathin oxide film and demon-strated that it had validity. 13 Following this precedent, we here attempt to discuss the ozone oxidation characteristics using the Deal-Grove model.…”

Section: Ozone Oxidation Mechanismmentioning

confidence: 99%

Synthesis of silicon dioxide film using high-concentration ozone and evaluation of the film quality

Koike¹,

Izumi²,

Nakamura³

et al. 2005

Journal of Elec Materi

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We investigated the ozone oxidation characteristics on a hydrogen-terminated Si substrate. A high-concentration ozone gas generator with an ozone condensation unit was specially designed and assembled for this study. During the oxidation by ozone with the concentration of 25 vol.% in the temperature range from 340°C to 625°C at 8 Torr (1.1 kPa), the formed oxide film thickness increased with oxidation time in accordance with the parabolic law, which suggests a diffusion-controlled step, while the oxidation by pure oxygen attained saturated states within 3 min of initiating oxidation. The activation energy for parabolic constants in the ozone oxidation was determined to be 0.52 eV. This value is much smaller than the activation energy for dry oxidation with oxygen, while it is almost the same as that in the plasma oxidation with the mixture of rare gas and oxygen. Moreover, the quality of the ozone oxidation film was evaluated by estimating the amount of suboxides (Si 3ϩ ϩ Si 2ϩ ϩ Si ϩ ) using x-ray photoelectron spectroscopy (XPS) analysis and the compressive stress using Fourier transform infrared (FT-IR) spectroscopic analysis. Both results showed that the quality of film subjected to ozone oxidation at 500°C is equal or superior to that of the film subjected to pyrogenic oxidation at 750°C in spite of the faster oxidation rate, and thus, the significant advantages of ozone oxidation at low oxidation temperatures could be confirmed.

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“…Therefore, the O( 1 D) process can reduce the thermal budget compared to the conventional oxidation process. We concluded that the only oxidation species in the UV-excited ozone process was O(1D), since atomic oxygen (O( 3 P)) generated by the thermal decomposition of ozone is not easily generated at temperatures lower than 410 C. 6 Finally, we discuss the surface temperature of poly-Si during UV irradiation. We have previously studied the O( 1 D) oxidation of poly-Si substrates.…”

Section: Resultsmentioning

confidence: 99%

“…The ~100% ozone used in these experiments was supplied by a pure ozone generator (Type: MPOGSM1C1; Meidensha Corp., Japan). [2][3][4][5] The use of pure ozone reduces the activation energy for Si oxidation from 0.81 eV for O2 to 0.34 eV, resulting in a reaction temperature as low as 410 C. 6 Below 410 C, the Si oxidation rate decreases abruptly owing to the lack of atomic oxygen in the ground state, O( 3 P), which is produced by the thermal decomposition of ozone. The reactivity of ozone can be further enhanced by photoexcitation using ultraviolet (UV) light, which illuminates the Hartley bands (200 to 300 nm) to produce atomic oxygen in an excited state, O( 1 D).…”

Section: Introductionmentioning

confidence: 99%