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In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n+/p junctions. Using LTA, high carrier concentration above 10 20 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I ON /I OFF ratio ∼10 5 and ideality factor (n) ∼1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I ON /I OFF ratio ∼10 7 and n ∼1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance. Index Terms-Ge, laser thermal annealing (LTA), leakage current, n+/p junction. I. INTRODUCTION I NDEED, many obstacles and challenges need to be addressed before Ge can become a forefront element in advanced CMOS technology. Realization of n-type ultrashallow junctions with highly activated dopants to maintain low Manuscript

We observe the formation of thin films of fibre-like aggregates from the prototypical organic semiconductor molecule para-hexaphenylene (p-6P) on graphite thin flakes and on monolayer graphene. Using atomic force microscopy, scanning electron microscopy, x-ray diffraction, polarized fluorescence microscopy, and bireflectance microscopy, the molecular orientations on the surface are deduced and correlated to both the morphology as well as to the high-symmetry directions of the graphitic surface: the molecules align with their long axis at ±11° with respect to a high-symmetry direction. The results show that the graphene surface can be used as a growth substrate to direct the self-assembly of organic molecular thin films and nanofibres, both with and without lithographical processing.

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