Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Vincent, Benjamin; Gencarelli, Federica; Bender, Hugo; Merckling, Clément; Douhard, Bastien; Petersen, Dirch Hjorth; Hansen, Ole; Henrichsen, Henrik Hartmann; Meersschaut, Johan; Vandervorst, Wilfried; Heyns, Marc; Loo, Roger; Caymax, Matty

doi:10.1063/1.3645620

Cited by 194 publications

(162 citation statements)

References 17 publications

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“…The GeSn layer is in-situ doped by adding B 2 H 6 to the Ge 2 H 6 and SnCl 4 precursors with a Boron target concentration of 3 × 10 18 cm −3 . This target value is experimentally confirmed by secondary ion mass spectroscopy (SIMS) measurements and, although B activation has not been measured on this specific sample, 100% B activation has been reported for similar GeSn layers [15]. According to (224) reciprocal space mappings (RSM) obtained from X-ray diffraction (XRD) measurements, the GeSn strain relaxation level is 43%.…”

Section: Devicessupporting

confidence: 49%

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Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Baert

Gupta

Gencarelli

et al. 2015

Solid-State Electronics

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In this work, the electrical properties of p-GeSn/n-Ge diodes are investigated in order to assess the impact of defects at the interface between Ge and GeSn using temperature-dependent current-voltage and capacitance-voltage measurements. These structures are made from GeSn epitaxial layers grown by CVD on Ge with in-situ doping by Boron. As results, an average ideality factor of 1.2 has been determined and an activation energy comprised between 0.28 eV and 0.30 eV has been extracted from the temperature dependence of the reverse-bias current. Based on the comparison with numerical results obtained from device simulations, we explain this activation energy by the presence of traps located near the GeSn/Ge interface.

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Section: Devicessupporting

confidence: 49%

“…A 200 nm thick Boron doped p+ GeSn layer was grown on top of a 4 , 450µm thick, Ge substrate by chemical vapor deposition (CVD) at 320 • C [15,16]. Blanket n-doped Ge(100) wafers with low (∼ 10 16 cm −3 ) carrier concentration were used as substrates.…”

Section: Devicesmentioning

confidence: 99%

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Baert

Gupta

Gencarelli

et al. 2015

Solid-State Electronics

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“…However, the nature of the strain is not that expected from uniform uniaxial expansion which would be expected to give rise to a series of well-defined secondary peaks (fringes) to the low angle side of the ð400Þ Bragg peak. 37,38 For ion-synthesised samples, the strain is nonuniform along the depth of the GeSn layer, which originates from a non-uniform Sn distribution due to the implanted Sn profile and the Sn redistribution during PLM. This leads to a broad GeSn Bragg peak and washed out fringes.…”

Section: A Structural Propertiesmentioning

confidence: 99%

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran

Pastor

Gandhi

et al. 2016

Journal of Applied Physics

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The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural properties of the alloys such as soluble Sn concentration, strain distribution, and crystal quality have been characterized by Rutherford backscattering spectrometry, Raman spectroscopy, x ray diffraction, and transmission electron microscopy. It is shown that it is possible to produce a high quality alloy with up to 6.2 at. %Sn. The optical properties and electronic band structure have been studied by spectroscopic ellipsometry. The introduction of substitutional Sn into Ge is shown to either induce a splitting between light and heavy hole subbands or lower the conduction band at the Γ valley. Limitations and possible solutions to introducing higher Sn content into Ge that is sufficient for a direct bandgap transition are also discussed.

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“…In the remaining v-Ge, Sn diffusion due to residual temperature gradient after each of the 100 laser pulses is observed. 5,17 Slight increase of signal intensity at the v-Ge/Si interfaces can also be attributed to matrix effects caused by changing crystal lattice.…”

mentioning

confidence: 99%

“…1,2 Due to the extreme low solubility of Sn in Ge (<1%), 3 great efforts were directed to optimize the growth of such alloys with conventional techniques like chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) by tuning the deposition parameters for a non-equilibrium epitaxial growth. [4][5][6][7][8] In the past, also alternative techniques involving laser annealing 9-11 were proposed but not further developed.…”

mentioning

confidence: 99%

Laser synthesis of germanium tin alloys on virtual germanium

et al. 2012

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Cited by 194 publications

References 17 publications

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Laser synthesis of germanium tin alloys on virtual germanium

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