Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for the design parameters of a one-dimensional finite-element-method (FEM) model of the PiN diode. The design parameters are also available for diverse physics-based analytical models. The PiN diode remains a complex device to model particularly during switching transients. The paper demonstrates that a simple FEM model may be considered unknowingly of the device exact technology. Heterogeneous simulation is illustrated. The state-of-art of parameter extraction methods is briefly recalled. The proposed procedure is detailed. The diode model and extracted parameters are systematically validated from electro-thermal point-of-view. Validity domains are discussed.

SUMMARYAccurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (I RM , V RM and t rr ).With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained.

This paper focuses on the role of the N-N + junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N-N + profile. A conventional doping profile model has been used in a previous work and an identification procedure for the main design parameters has been demonstrated. However the validity range of identified PiN-diode models appeared quite limited for hard current and voltage conditions. Readers have asked for the effect of a more advanced doping profile. The turn-off transient of an STTB506D device is considered from experimental and simulation point-ofview inside a fully characterized switching cell. A limitation of the conventional doping profile model is demonstrated and explained physically in order to introduce the necessity of a more complex doping profile. An advanced doping profile is then considered and a comparative study between experimental and simulated turn-off transient behavior of the device is established.

SUMMARYElectro-thermal simulations of a PIN-diode based on the finite-element method, show a non-uniform temperature distribution inside the device during switching transients. Hence, the implicit assumption of a uniform temperature distribution when coupling an analytical electrical model and a thermal model yields inaccurate electro-thermal behaviour of the PIN-diode so far. The idea of including non-uniform temperature distribution into power semiconductor device models is not new, as accurate electro-thermal simulations are required for designing compact power electronic systems (as IC or MCM). Instead of using a one-dimensional finite difference or element method, the bond graphs and the hydrodynamic method are utilized to build an electro-thermal model of the PIN-diode. The results obtained by this original technique are compared with those obtained by a commercial finite-element simulator. The results are similar but the computation effort of the proposed technique is a fraction of that required by finite-element simulators. Moreover, the proposed technique may be applied easily to other power semiconductor devices.