On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

Abstract

Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for the design parameters of a one-dimensional finite-element-method (FEM) model of the PiN diode. The design parameters are also available for diverse physics-based analytical models. The PiN diode remains a complex device to model particularly during switching transients. The paper demonstrates that a simple FEM model may be considered unknowingly of the device exact technology. Heterogeneous simulation is illustrated. The state-of-art of parameter extraction methods is briefly recalled. The proposed procedure is detailed. The diode model and extracted parameters are systematically validated from electro-thermal point-of-view. Validity domains are discussed.

Design of an Integrated Inductor with Magnetic Core for Micro-Converter DC-DC Application

“…While power MOSFETs (metal-oxide semiconductor fieldeffect transistors) are typically used in high power converters [16,17], they are not suitable for integrated converters due to the medium voltage and power ratings [18]. Therefore, CMOS (complimentary metal-oxide semiconductor) transistors are used in integrated DC-DC converters.…”

Rectifier Dynamic Electro-Thermal Simulation for Power Factor Correction in Electric Vehicles Application

“…This power diode (BYT 12P-1000 (12 A/1000V) (TO220 package)) [23,24] contains three layers of different materials; is characterized by its thermal capacity ρc Vi its thickness L i and its thermal conductivity k i (Fig. 7).…”

Multi-Bias Model for Power Diode Using a Very High Description Language

“…p + /i and i/n + junctions, the carrier transit time must be defined. So, by varying the depletion region width in the power PIN diode model with respect to the two (8) and (9), the carrier transit time T M will be varied and the following equation is crucial for establishing this relation:…”

“…These oscillations at the end of the reverse recovery voltage waveforms are due to residual phenomena and are very difficult to simulate. However, the effect of these oscillations is not very interesting in design applications [8].…”

“…In fact, as stated in [8], probes interact with the device under test, create delays due to propagation in the cable and worst of all degrade the signal due to distortion in the probes and the cables. The overall accuracy of the extraction procedure requires the probe effects to be taken into account in simulation.…”