A novel approach to extract accurate design parameters of PiN diode

Abstract

SUMMARYAccurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (I RM , V RM and t rr ).With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained.

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

“…They concern a stochastic optimization algorithm. In reference , a novel diode design parameters identification procedure is detailed. It is close to the procedure here.…”

“…Accurate powers PiN diodes temperature‐dependent models are necessary to design a power electronic circuit . The model proposed in is intended to simulate reverse recovery for instance: it is a critical operation of a power diode inside a converter. System‐level simulation should approximate overvoltage, power losses, over current and electromagnetic compatibility among others quantities that a design engineer must control.…”

“…On the basis of this background, an advanced PiN diode temperature-dependent model is proposed (Appendix A). This model is based on equations (1)- (7) and the temperature-dependent model parameters (equations (8)-(20)). Figure 3 illustrates the developed experimental MOSFET-Diode switching cell.…”

A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV

“…The most important physical models are those of the forbidden energy band, carrier mobility, SRH recombination, and ionization coefficients. The values of the coefficients of physical models for the two materials used as well as the geometrical parameters of the two diodes under test are taken from the work of [3], [4].…”

A low-cost experimental test bench for electronic power devices

“…From an experimental point of view, a Diode/MOSFET switching cell (Fig. 1), for example, is made up of a MOSFET and a IGBT drivers circuits, a capacity polypropylene, a voltage power source supply and another power supply for current [7,8]. Such experimental switching cell two power source supplies are used; one for voltage such as XANTREX XKW SERIES 3KW, 0 with 10A, and one more for current like HEWLETT, power source PACKARD 665 (0-20A) [7].…”