On the Role of the N–N$^{+}$ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior

Abstract

This paper focuses on the role of the N-N + junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N-N + profile. A conventional doping profile model has been used in a previous work and an identification procedure for the main design parameters has been demonstrated. However the validity range of identified PiN-diode models appeared quite limited for hard current and voltage conditions. Readers have asked for the effect of a more advanced doping profile. The turn-off transient of an STTB506D device is considered from experimental and simulation point-ofview inside a fully characterized switching cell. A limitation of the conventional doping profile model is demonstrated and explained physically in order to introduce the necessity of a more complex doping profile. An advanced doping profile is then considered and a comparative study between experimental and simulated turn-off transient behavior of the device is established.

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

“…A comparison with PiN diode model state‐of‐art should be preferred. Numerous PiN diode model are satisfying so far . However, as reported in , the switching parameter error between experimental and simulated results of the most published PiN diode model is around 12%: The model in , for example, is based on the state variable modeling to obtain a PiN diode model that taken into account the high injection level.…”

“…A comparison with PiN diode model state-of-art should be preferred. Numerous PiN diode model are satisfying so far [11][12][13][14][15][16][17][18][19][20][21][22]. However, as reported in [20], the switching parameter error between experimental and simulated results of the most published PiN diode model is around 12%: [2,4].…”

“…Thus, it is mainly reactive to the temperature. The saturation current is then presented by equation (14) in Table III, where D is the ambipolar diffusion given by equation (15), L is the diffusion length defined in equation (16) and μ n and μ p are the electron and hole mobilities, respectively. Its relationships, detailed in [24], are presented in equations (17) and (18) in Table III. The ambipolar lifetime, τ, model is described in [26] by equation (19) (Table III).…”

“…Accurate powers PiN diodes temperature‐dependent models are necessary to design a power electronic circuit . The model proposed in is intended to simulate reverse recovery for instance: it is a critical operation of a power diode inside a converter.…”

A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV

“…To perform simulations with a high level of precision during the opening of the PiN diode, it is necessary to design and model a suitable test circuit. Accurate modeling of a test circuit was developed in the work of [10], [11] to predict the exact behavior of the diode during its reverse recovery. We implemented the circuit in the simulator DESSIS-ISE.…”