Thin film magnetoelectric (ME) two–two composites consisting of AlN and amorphous (Fe90Co10)78Si12B10 layers were fabricated by magnetron sputtering on Si (100) substrates. Upon magnetic field annealing they show an extremely high ME coefficient of 737 V/cm Oe at mechanical resonance at 753 Hz and 3.1 V/cm Oe out of resonance at 100 Hz. These are the highest reported ME coefficients in thin film composites ever. Furthermore, the induced magnetic anisotropy by field annealing serves the possibility to obtain a sensor element with a pronounced sensitivity in only one dimension, which allows the realization of a three-dimensional vector field sensor.
This paper reports on design, fabrication and characterization of high-Q MEMS resonators to be used in optical applications like laser displays and LIDAR range sensors. Stacked vertical comb drives for electrostatic actuation of single-axis scanners and biaxial MEMS mirrors were realized in a dual layer polysilicon SOI process. High Q-factors up to 145,000 have been achieved applying wafer level vacuum packaging technology including deposition of titanium thin film getters. The effective reduction of gas damping allows the MEMS actuator to achieve large amplitudes at high oscillation frequencies while driving voltage and power consumption can be minimized. Exemplarily shown is a micro scanner that achieves a total optical scan angle of 86 degrees at a resonant frequency of 30.8 kHz, which fulfills the requirements for HD720 resolution. Furthermore, results of a new wafer based glass-forming technology for fabrication of three dimensionally shaped glass lids with tilted optical windows are presented.
We present a novel process technology, which enables precision micro machining of glass wafers. With this Glass Flow Process GFT [1,21, which is based on viscous deformation at temperatures above the glass transition temperature T,, any surface topography available on a silicon substrate can be moulded into Borosilicate glasses, especially into bondable glasses'like Borofloat' or Pyrex'. Beside the replication of silicon structures this technique allows the fabrication of optical micro lens arrays with high aspect ratios and minimum spacing. Introducing this GFP technology to MEMS processing enables the deep structuring of glass substrates and opens a wide range of new applications. Optical quality micro lenses with saggital heights above 100 pm are demonstrated.In this paper an insight description of the GFP technology is given and the functionality of this new technology is presented by optical measurements of micro lens demonstrators.
A comprehensive study on the complete process for the fabrication of AlN-based MEMS sensors and actuators is presented. Varying the bias voltage during the reactive rf sputtering enables to adjust the stress level in AlN films in the range of about 2 GPa. For the first time the influence of the rf bias power on the whole set of piezoelectric parameters was investigated. It could be shown that the dielectric permittivity, dielectric loss, rocking curve width, effective longitudinal piezoelectric coefficient d 33,f and effective transverse piezoelectric coefficient e 31,f remained unchanged. Further it was observed that piezoelectric AlN films could be deposited at low process temperatures of only 200 °C. Moreover an increase in the e 31,f coefficient with thicker films could be stated. Finally cone formation during wet etching was observed and revealed a formation of {01-12} planes which exhibit a slow etching rate. The c-textured growth of AlN starts directly at the Pt interface
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