We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5 nm linewidth and 14 nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15 psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5 nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4 in. wafer were demonstrated.The field of nanotechnology is advancing rapidly. Applications of nanotechnology include subwavelength optical elements, biochemical analysis devices, photonic crystals, high-density single-domain magnetic storage, and singlemolecule devices, to name a few. Yet, key to the commercial success of these nanotechnology applications are low cost and high throughput manufacturing capabilities. State-of-theart manufacturing photolithography patterning tools are both too expensive and incapable of producing the necessary pitch and feature sizes of these applications. Thus, presently, researchers have been largely constrained to using lowthroughput lithography tools, such as electron-beam lithography (EBL), atomic force microscopy (AFM), and ion-beam lithography. For high-throughput and low-cost lithography, various "nanoprinting" technologies have been developed. 1-3 Here, we report our investigation of the resolution limit of nanoimprint lithography, where we demonstrated a nanoimprint record of 5 nm linewidth features and 14 nm pitch over a large area, its applications in nanogap metal contacts, and a study of fabrication yields.In photocurable nanoimprint lithography (P-NIL) (shown in Fig. 1), a mold is pressed into a low viscosity photocurable resist liquid to physically deform the resist shape such that it conforms to the topology of the mold. The resist is cured with exposure to UV light, crosslinking the various components in the resist liquid, producing a uniform, relatively rigid polymer network. The mold is then separated from the cured resist. Finally, an anisotropic reactive ion etch (RIE) removes the residual resist in the compressed area, exposing the substrate surface.In order to explore the performance of P-NIL, a variety of molds were fabricated to test specific attributes, including minimum pitch (maximum density), minimum feature size, and large-area uniformity patterning. Previously, 10 nm dots and 40 nm pitch have been demonstrated by NIL 1 with the resolution limited by our ability to fabricate the mold, as proximity effects inherent with EBL make sub-35 nm pitch patterning very difficult. To produce a mold with a pitch resolution surpassing EBL capabilities, we fabricated a NIL mold by selectively wet etching Al 0.7 Ga 0.3 As from a cleaved edge of a GaAs/ Al 0.7 Ga 0.3 As superlattice [grown by molecular-beam epitaxy (MBE)] with a dilute solution of hydrofluoric acid (HF). 4,5 This mold fabrication process offers many advantages, specifically very dense sub-50 nm pitch topologies can be ...

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In this article we report on the fabrication of subwavelength antireflection structures on silicon substrates using a trilayer resist nanoimprint lithography and liftoff process. We have fabricated cone-shaped nanoscale silicon pillars with a continuous effective index gradient, which greatly enhances its antireflective performances. Our measurements show that the two-dimensional subwavelength structure effectively suppresses surface reflection over a wide spectral bandwidth and a large field of view. A reflectivity of 0.3% was measured at 632.8 nm wavelength, which is less than 1% of the flat silicon surface reflectivity.

A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated the fabrication of 6 nm half-pitch gratings and 0.04 µm 2 cell area SRAM metal interconnects with 20 nm line half-pitch in resist by NIL. The mould for the 6 nm half-pitch grating was fabricated by cleaving a GaAs/Al 0.7 Ga 0.3 As superlattice grown on GaAs with molecular beam epitaxy, and selectively etching away the Al 0.7 Ga 0.3 As layers in dilute hydrofluoric acid. The mould for the 0.04 µm 2 SRAM metal interconnects was fabricated in silicon dioxide using 35 kV electron beam lithography with polystyrene as a negative resist and a reactive ion etch with the resist as mask. Imprints from both moulds showed excellent fidelity and critical dimension control.

We developed a hybrid nanoimprint-soft lithography technique with sub-15 nm resolution. It is capable of patterning both flat and curved substrates. The key component of the technology is the mold, which consists of rigid features on an elastic poly(dimethylsiloxane) (PDMS) support. The mold was fabricated by imprinting a reverse image onto the PDMS substrate using a UV-curable low-viscosity prepolymer film. Patterns with sub-15-nm resolution were faithfully duplicated on a flat substrate without applying external pressure. Gratings at 200 nm pitch were also successfully imprinted onto the cylindrical surface of a single mode optical fiber with a 125 µm diameter.

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Poly(epsilon-caprolactone)-b-poly(ethylene glycol)-b-poly(epsilon-caprolactone) triblock copolymers were synthesized by the ring-opening polymerization of epsilon-caprolactone in the presence of hydroxyl-terminated poly(ethylene glycol) with different molecular weights, using stannous octoate catalyst. Micelles prepared by the precipitation method with these triblock copolymers exhibit a core-shell structure. The degradation behaviors of these core-shell micelles in aqueous solution were investigated by FT-IR, 1H NMR, GPC, DLS, TEM, and AFM. It was found that the degradation behavior of micelles in aqueous solution was quite different from that of bulk materials. The size of the micelles increased in the initial degradation stages and decreased gradually when the degradation period was extended. The caprolactone/ethylene oxide (CL/EO) ratio in micelles measured by NMR also shows an increase at the initial degradation stage and a decrease at later stages. The morphology of these micelles became more and more irregular during the degradation period. We explain the observed behavior by a two-stage degradation mechanism with interfacial erosion between the cores and the shells followed by core erosion.