6 nm half-pitch lines and 0.04 µm²static random access memory patterns by nanoimprint lithography

Abstract

A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated the fabrication of 6 nm half-pitch gratings and 0.04 µm 2 cell area SRAM metal interconnects with 20 nm line half-pitch in resist by NIL. The mould for the 6 nm half-pitch grating was fabricated by cleaving a GaAs/Al 0.7 Ga 0.3 As superlattice grown on GaAs with molecular beam epitaxy, and selectively etching away the Al 0.7 Ga 0.3 As layers in dilute hydrofluoric acid. The mould for the 0.04 µm 2 SRAM metal interconnects was fabricated in silicon dioxide using 35 kV electron beam lithography with polystyrene as a negative resist and a reactive ion etch with the resist as mask. Imprints from both moulds showed excellent fidelity and critical dimension control.

Plasmonic Nanostructures Prepared by Soft UV Nanoimprint Lithography and Their Application in Biological Sensing

“…The fabrication with soft UV-NIL can be realized at room temperature and low pressure. However, the resolution of the fabricated molds is a limiting factor of UV-NIL [8,9]. Flexible molds in soft UV-NIL were realized by the cast molding processes, in which a suitable liquid mold material is deposited on a patterned master mold, followed by optical curing of the material.…”

Nanoimprint Lithography - Next Generation Nanopatterning Methods for Nanophotonics Fabrication

“…Both these records were based on the use of EBL-written templates that limited the resolution. The same group demonstrated a 6 nm linewidth using a template made from an epitaxiallygrown GaAs/AlGaAs superlattice (Austin et al 2005). However, as early as 2004 Hua had demonstrated linewidths as low as 2 nm using a carbon nanotube-based template (Hua et al 2004).…”

Nanoporous Structure Fabrication in Selective Areas by Block Copolymer Self-Assembly and Electron Beam Lithography

“…PMMA is well-known as a positive tone resist [12] and PS is used as a negative tone resist [25][26]. In this paper, we used PS-b-PMMA thin films as a resist for electron beam lithography.…”