sources into fuels and value-added chemicals. [1−3] However, non-ideal catalytic activity primarily caused by the sluggish kinetics has long posed a crucial challenge in restricting the efficiency of electrocatalytic reactions. [4,5] Based on this, enormous research is devoted to enhancing the intrinsic activity of pre-existing active sites. For example, facet control can selectively expose the high-energy facets of catalysts to promote the adsorption of electrolytes, providing higher catalytic performance. [6] However, catalysts with high-energy facets are generally thermodynamic unstable and their preparations remain greatly challenging. Strain regulation can adjust the local coordination environment of active sites, [7] but its application is restricted by the stability of the modified structure with huge strain. Additionally, alloying with metals/nonmetals is also an effective strategy to decrease the reaction barrier for electrocatalytic reactions, [8] while the thermodynamic miscibility among the different elements is a necessary prerequisite. [9] In essence, the reaction kinetics is effectively triggered to promote the catalytic performance by these design approaches, which is ascribed to appropriate electronic structures. [10,11] Nevertheless, as for the existing catalytic materials, a rational design to tailor the optimal electronic structures is currently lacking, which is highly desired.Here, we propose a design principle, namely "dual self-built gating" to greatly boost the hydrogen evolution reaction (HER) performance of catalysts. Taking ReS 2 and WS 2 as an example, the dual self-built gating originated from in-plane ReS 2 -WS 2 covalent bonds and out-plane ReS 2 /WS 2 interlayer interaction induces electrons to directionally transfer from WS 2 to ReS 2 , [12,13] resulting in charge redistribution at the interface. In this case, owing to the tailored electronic structures, dual selfbuilt gating can balance the adsorption of intermediates and the desorption of hydrogen synergistically, leading to a dramatic improvement in reaction kinetics. As demonstrated by density functional theory (DFT) calculations, the dual gating region shows a Gibbs free energy close to zero (0.03 eV), suggesting that the charge redistribution at the interface enhances the intrinsic activity of active sites. More interestingly, on account of the adjustable carrier density, we also confirm the Optimizing the intrinsic activity of active sites is an appealing strategy for accelerating the kinetics of the catalytic process. Here, a design principle, namely "dual self-built gating", is proposed to tailor the electronic structures of catalysts. Catalytic improvement is confirmed in a model catalyst with a ReS 2 -WS 2 /WS 2 hybridized heterostructure. As demonstrated in experimental and theoretical results, the dual gating can bidirectionally guide electron transfer and redistribute at the interface, endowing the model catalyst with an electron-rich region. The tailored electronic structures balance the adsorption of intermediate...

Recently, many breakthroughs have been made in graphene research, allowing scientists to explore and understand the material world from a two‐dimensional (2D) perspective. The interface issue of graphene is the most important, because all of its atoms are exposed to the interface for this atomically thin material. The 2D nature necessitates a sensitive and non‐destructive interface probe to detect the structure and properties. Synchrotron radiation (SR) characterization techniques, with the ultra‐high resolution and extremely wide energy range, have been utilized with increasing frequency to explore the challenging interface sciences. In this review, these interface characterization techniques based on SR and how they monitor the structure evolution of graphene in different interfaces such as graphene–substrate and graphene–graphene interface are first introduced. Graphene's layer number, interlayer spacing, and stacking order are governed by these interfaces, determining the final properties. Then, the property detection and modulation in different interfaces of graphene are also discussed. Finally, the current challenges and outlook on the future development for SR techniques to characterize graphene interface are presented.

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2D room‐temperature magnetic materials are of great importance in future spintronic devices while only very few are reported. Herein, a plasma‐enhanced chemical vapor deposition approach is exploited to construct the 2D room‐temperature magnetic MnGa4‐H single crystal with a thickness down to 2.2 nm. The employment of H2 plasma makes hydrogen atoms can be easily inserted into the MnGa4 lattice to modulate the atomic distance and charge state, thereby ferrimagnetism can be achieved without destroying the structural configuration. The as‐obtained 2D MnGa4‐H crystal is high‐quality, air‐stable, and thermo‐stable, demonstrating robust and stable room‐temperature magnetism with a high Curie temperature above 620 K. This work enriches the 2D room‐temperature magnetic family and opens up the possibility for the development of spintronic devices based on 2D magnetic alloys.