Ballistically hot electron injectors have been designed using a graded gap GaAs/AlGaAs structure and incorporated into the cathode side of a GaAs Gunn diode drift region. Epitaxial material has been grown using MBE techniques and diodes fabricated. RF assessment at 94GHz has resulted in efficiencies over 2.3%, above 50mW output power, combined with low sideband noise performance and much improved temperature stability.
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