Hot electron injection in millimetre wave Gunn diodes

Couch, N. R.; Kelly, Michael J.; Spooner, H.; Kerr, T. M.

doi:10.1016/0038-1101(89)90295-5

“…3b); the effective mass reduces on the same timescale as the photoconductivity rises, in close agreement with Eq. (1). Although previous studies have reported THz pulse induced impact ionization and redistribution of electrons between the Γ and L valleys [45,46], the effective masses detected in our THz range suggest that our measurements are only sensitive to the electrons near the Γ valley [47].…”

Section: Hot Electron Cooling In Insbcontrasting

confidence: 53%

“…Hot charge carriers play an important role in semiconductor devices such as Gunn diodes [1,2], avalanche photodiodes [3,4] and hot carrier solar cells [5,6]. However, they can diminish the performance of other devices such as field effect transistors [7].…”

Section: Introductionmentioning

confidence: 99%

Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance

Xia,

Monti,

Boland

et al. 2021

Preprint

0

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Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot separate the effects of charge-carrier recombination from effective mass changes as charges cool and experience different regions of the electronic band structure. Here we present a form of time-resolved magneto-THz spectroscopy which allows us to measure cyclotron effective mass on a picosecond time scale. We demonstrate this technique by observing electron cooling in the technologically-significant narrow-bandgap semiconductor indium antimonide (InSb). A significant reduction of electron effective mass from 0.032 me to 0.017 me is observed in the first 200 ps after injecting hot electrons. Measurement of electron effective mass in InSb as a function of photo-injected electron density agrees well with conduction band non-parabolicity predictions from ab initio calculations of the quasiparticle band structure.

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“…Charge transport simulations of the double peak velocity-field characteristics showed a higher tuning frequency range due to the second peak. However, the conventional device structure used in this study did not include a hot electron injector which is known to reduce phase noise, improve temperature stability, and improve efficiency [2], [3]. Additionally, the energy balance simulation method provides a more accurate analysis than the drift-diffusion method used in the simulation.…”

Section: Introductionmentioning

confidence: 99%

Power-frequency performance of step-graded double Gunn diodes

Butts

¹

,

El-Ghazaly

²

2023

J. Phys.: Conf. Ser.

0

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Simulations of conventional Gunn diodes containing the double Gunn effect have shown a significant increase in oscillation frequency and frequency range. However, conventional Gunn diodes suffer from higher phase noise, lower efficiency, and reduced temperature stability due to the lack of a hot electron injector. A study on the performance of a Double Gunn diode with a graded gap injector is presented. The second region of negative differential mobility is gradually introduced in several temperature-dependent mobility models, which are implemented in an energy balance simulation. Devices with transit lengths of 0.7μm, 1.1μm, and 1.65μm are simulated. All devices experience an increase in oscillation frequency with increasing intensities of the double Gunn effect. The frequency range doubles at significant intensities of the effect in the devices with transit lengths of 0.7μm and 1.65μm.

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“…Hot charge carriers play an important role in semiconductor devices such as Gunn diodes [1,2], avalanche photodiodes [3,4] and hot carrier solar cells [5,6]. However, they can diminish the performance of other devices such as field effect transistors [7].…”

Section: Introductionmentioning

confidence: 99%

Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance

Xia

¹

,

Monti

²

,

Boland

³

et al. 2021

View full text Add to dashboard Cite

Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot separate the effects of charge-carrier recombination from effective mass changes as charges cool and experience different regions of the electronic band structure. Here we present a form of time-resolved magneto-THz spectroscopy which allows us to measure cyclotron effective mass on a picosecond time scale. We demonstrate this technique by observing electron cooling in the technologically-significant narrow-bandgap semiconductor indium antimonide (InSb). A significant reduction of electron effective mass from 0.032 me to 0.017 me is observed in the first 200 ps after injecting hot electrons. Measurement of electron effective mass in InSb as a function of photo-injected electron density agrees well with conduction band non-parabolicity predictions from ab initio calculations of the quasiparticle band structure.

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Hot electron injection in millimetre wave Gunn diodes

Cited by 12 publications

References 4 publications

Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance

Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance

Power-frequency performance of step-graded double Gunn diodes

Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance

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