Ballistically hot electron injectors have been designed using a graded gap GaAs/AlGaAs structure and incorporated into the cathode side of a GaAs Gunn diode drift region. Epitaxial material has been grown using MBE techniques and diodes fabricated. RF assessment at 94GHz has resulted in efficiencies over 2.3%, above 50mW output power, combined with low sideband noise performance and much improved temperature stability.
Planar Doped Barrier (PDB) diodes have recently been developed from MBE grown GaAs material, with extremel-y low barrier heights and highly asymmetrical I-V characteristics. The paper reports upon the microwave burnout performance of these devices under CW and pulsed conditions, and discusses the significant advantages offered by PDB devices over conventional microwave Schottky mixer diodes. The burnout mechanisms have been considered and the improved burnout performance rel-ated to the PDB material and device structures.
D u r r a n t , D. H a r r i s o n , M. Hobden, S. Neylon, V . Wilkinson Marconi E l e c t r o n i c Devices L t d . , Doddington Road, Lincoln LN6.3LF ABSTRACT This paper describes t h e design of a 960EIHz SAW resonator oscillator to meet a specitzLc dqital timing a p p l i c a v requiring a reference some stability of 5 x 10-. A novel technique w a s developed f o r t h e measurement of t h e source stability in a very s h o r t sampling period based on t h e direct measurement of t h e RF spectrum.
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