Planar Doped Barrier Diodes Offering Improved Microwave Burnout Performance over Si and GaAs Schottky Diodes

Abstract

Planar Doped Barrier (PDB) diodes have recently been developed from MBE grown GaAs material, with extremel-y low barrier heights and highly asymmetrical I-V characteristics. The paper reports upon the microwave burnout performance of these devices under CW and pulsed conditions, and discusses the significant advantages offered by PDB devices over conventional microwave Schottky mixer diodes. The burnout mechanisms have been considered and the improved burnout performance rel-ated to the PDB material and device structures.

Method of Focusing Sequences of Space-Time Pulses with Phase-Frequency Control

“…One of the possible ways to create specialized radio equipment to transmit information of great power and stealth is the development of antenna systems using focusing of electromagnetic radiation in the Fraunhofer zone [1][2][3][4].…”