The 1/F Noise Performance of GaAs Planar Doped Barrier Mixer Diodes

Investigation of detection properties of planar microwave diodes based on A3B5 semiconductor compounds in millimeter–wavelength range

“…The sophisticated technology of the PDB diode fabrication relied on a material preparation process called MBE, suitable for growing very thin epitaxial layers ("Fundamentals of RF and Microwave Power Measurements," 2000) and the flexibility to alter the barrier height by adjusting doping concertation which made it the proper competitor to LBS diodes (Kearney, Condie & Dale, 1991;Dale, Neylon, Condie & Kearney, 1989a). It was shown (Dale, Neylon, Condie, Hobden & Kearney, 1990) that PDB diodes also have better 1/f noise properties than Schottky equivalents. Kearny (Dale, Neylon, Condie & Kearney, 1989b) was the first to suggest a GaAs PDB diode for MW and MMW detector application as an alternative to Schottky.…”