2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)
DOI: 10.1109/mwsym.2004.1339147
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High voltage sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications

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“…The voltage sensitivity of PDB diodes reached up to 2700 V/W at 35 GHz frequency and 500 V/W at 94 GHz frequency (Kearney et al, 1991;Kearney, 1992). However, only concept devices were designed, and no major improvements in detection properties were reached (Vo & Hu, 2006;Vo et al, 2004;Hu, Van Tuyen & Rezazadeh, 2005), encountering inefficiency in practical application due to challenging doping tolerances.…”
Section: Electrical and High-frequency Properties Of Microwave Diodes...mentioning
confidence: 99%
“…The voltage sensitivity of PDB diodes reached up to 2700 V/W at 35 GHz frequency and 500 V/W at 94 GHz frequency (Kearney et al, 1991;Kearney, 1992). However, only concept devices were designed, and no major improvements in detection properties were reached (Vo & Hu, 2006;Vo et al, 2004;Hu, Van Tuyen & Rezazadeh, 2005), encountering inefficiency in practical application due to challenging doping tolerances.…”
Section: Electrical and High-frequency Properties Of Microwave Diodes...mentioning
confidence: 99%