High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications

Hu, Zhirun; Vo, V.T.; Rezazadeh, A.A.

doi:10.1109/lmwc.2005.844204

Cited by 12 publications

(3 citation statements)

References 8 publications

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“…Schottky diodes are mostly used for detectors to rectify millimeter waves into the corresponding DC voltage. [11][12][13] The long gate electrode of a HEMT is typically used as a Schottky-diode detector. 5) However, a Schottky diode requires a forward bias circuit in the MMIC to enhance sensitivity because it has a high impedance at zero bias.…”

Section: Introductionmentioning

confidence: 99%

Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection

Takahashi

Sato

Hirose

et al. 2010

Jpn. J. Appl. Phys.

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The effect of energy band control with varying carrier concentration in GaAsSb-based backward diodes was investigated and diode parameters were analyzed to enhance voltage sensitivity. The backward diodes consisted of a heterojunction of p-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-In0.63Ga0.37As/n-In0.53Ga0.47As, and they were mostly lattice-matched to an InP substrate. The degree of energy band bending at the depletion layer in n-In0.63Ga0.37As was varied on the basis of the carrier concentration in the n-In0.53Ga0.47As band control layer. Voltage sensitivity depends on carrier concentration since the concentration affects the band bending structure at the junction. The parameter analysis indicated that junction capacitance decreased when the carrier concentration in the band control layer decreased. When the carrier concentration in the band control layer was as low as 5×1018 cm-3, with the diode mesa at a diameter of 2.0 µm, an unmatched voltage sensitivity of 1495 V/W was obtained.

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Section: Introductionmentioning

confidence: 99%

Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection

Takahashi

Sato

Hirose

et al. 2010

Jpn. J. Appl. Phys.

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“…Therefore, a high-power and high-output-current microwave SBD is required. Highly sensitive silicon-or GaAs-based SBD detectors have been demonstrated for microwave power detection at high frequency; however, they are limited at a microwave detectable power level, due to the low breakdown field strength of Si and GaAs [9][10][11][12]. On the other hand, GaN SBDs are promising candidates for improving microwave detection power.…”

Section: Introductionmentioning

confidence: 99%

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

Sun

Kang

Deng

et al. 2021

Semicond. Sci. Technol.

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We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm−2 at 3 V, a low specific on-resistance (R ON,sp) of 0.22 mΩ cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.

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“…Typically, Schottky diodes are used as the detectors. 9,10) However, a Schottky diode requires a forward bias circuit, which increases 1=f noise, 11) to enhance sensitivity because it has a high impedance at zero bias. 12) Hence, zero-bias detectors are needed, and several zero-bias detectors for millimeter-wave detection have been reported.…”

mentioning

confidence: 99%

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

Takahashi

Sato

Nakasha

et al. 2012

Appl. Phys. Express

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Backward diodes consisting of a heterojunction of p-GaAs 0:51 Sb 0:49 /n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal growth of the diodes. The backward diodes indicated a curvature coefficient of À17:6 V À1 , which is sufficiently large for zero-bias operation. Voltage sensitivity of 338 V/W was obtained at 94 GHz by use of the circular mesa diode of 2.0 m diameter. Optimum voltage sensitivity of 1603 V/W was estimated when the input impedance was completely matched with the diodes. #

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High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications

Cited by 12 publications

References 8 publications

Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection

Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

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